STP19NB20FP ,N-CHANNEL 200V 0.5 OHM 19A TO-220/TO-220FP/I2PAK POWERMESH MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STP19NF20 ,N-channel 200 V, 0.15 Ohm typ., 15 A MESH OVERLAY(TM) Power MOSFET in TO-220 packageApplications■ Switching applicationFigure 1. Internal schematic diagramDescription!" 4$
STP19NB20-STP19NB20.-STP19NB20FP
N-CHANNEL 200V 0.5 OHM 19A TO-220/TO-220FP/I2PAK POWERMESH MOSFET
1/12August 2002
STP19NB20 - STP19NB20FP
STB19NB20-1N-CHANNEL 200V - 0.15Ω - 19A - TO-220/TO-220FP/I2 PAK
PowerMESH™ MOSFET
(1)ISD ≤19 A, di/dt ≤300A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX TYPICAL RDS(on) = 0.15 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
DESCRIPTIONUsing the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR TELECOM,
INDUSTRIAL AND CONSUMER
ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
STP19NB20/FP/STB19NB20-1
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/12
STP19NB20/FP/STB19NB20-1
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area for TO-220FPSafe Operating Area for TO-220/I2 PAK
STP19NB20/FP/STB19NB20-1
Output Characteristics
Tranconductance
Tranfer Characteristics
Thermal Impedance for TO-220/I2 PAK Thermal Impedance for TO-220FP
Static Drain-Source On Resistance
5/12
STP19NB20/FP/STB19NB20-1
Normalized On Resistance vs Temperature
Capacitance VariationsGate Charge vs Gate-source Voltage
Source-drain Diode Forward Characteristics
STP19NB20/FP/STB19NB20-1
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
