STP16NK60Z ,N-CHANNEL 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)600 VDS GSV Drain-g ..
STP16NK65Z ,N-CHANNEL 650 VAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 650 VDS GSV Drain ..
STP16NS25 ,N-CHANNEL 250V 0.23 OHM 16A TO-220/TO-220FP MESH OVERLAY MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP16NS25 STP16NS25FPV Drain-source Voltage (V = ..
STP16NS25FP ,N-CHANNEL 250V 0.23 OHM 16A TO-220/TO-220FP MESH OVERLAY MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STP17NF25 ,N-channel 250 V, 0.14 Ohm, 17 A, TO-220 STripFET(TM) II Power MOSFETAbsolute maximum ratingsValueSymbol Parameter UnitTO-220, DPAK TO-220FPV Drain-source voltage 250 V ..
STP17NK40Z ,N-CHANNEL 400 VSTP17NK40Z - STP17NK40ZFPN-CHANNEL 400V - 0.23Ω - 15A TO-220/TO-220FPZener-Protected SuperMESH™Powe ..
SZ3536 , SURFACE MOUNT SILICON ZENER DIODES
SZ4510 , SURFACE MOUNT SILICON ZENER DIODES
SZ4511 , SURFACE MOUNT SILICON ZENER DIODES
SZ4512 , SURFACE MOUNT SILICON ZENER DIODES
SZ4513 , SURFACE MOUNT SILICON ZENER DIODES
SZ4514 , SURFACE MOUNT SILICON ZENER DIODES
STP16NK60Z
N-CHANNEL 600V
1/11March 2004
STP16NK60Z- STB16NK60Z-S
STW16NK60ZN-CHANNEL 600V- 0.38Ω -14A TO-220/I
2 SPAK/ TO-247
Zener-Protected SuperMESH™ MOSFET TYPICAL RDS(on)= 0.38Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTIONThe SuperMESH™ seriesis obtained through an
extreme optimizationof ST’s well established strip-
based PowerMESH™ layout.In additionto pushing
on-resistance significantly down, special careis tak-to ensurea very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full rangeof high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES
ORDER CODE
STP16NK60Z- STB16NK60Z-S- STW16NK60Z2/11
ABSOLUTE MAXIMUM RATINGS) Pulse width limitedby safe operating area
(1)ISD ≤14A, di/dt ≤ 200 A/µs,VDD≤ V(BR)DSS,Tj≤ TJMAX.
(*) Limited onlyby maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionallybe
applied from gateto source.In this respect the Zener voltageis appropriateto achievean efficient and
cost-effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the
usageof external components.
3/11
STP16NK60Z- STB16NK60Z-S- STW16NK60Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300µs, duty cycle1.5%. Pulse width limitedby safe operating area. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
STP16NK60Z- STB16NK60Z-S- STW16NK60Z4/11
Thermal Impedance for TO-247
Thermal Impedance for TO-220/I²SPAKSafe Operating Area for TO-220/I²SPAK
Safe Operating Area for TO-247
Transfer CharacteristicsOutput Characteristics
5/11
STP16NK60Z- STB16NK60Z-S- STW16NK60Z
Transconductance Static Drain-source On Resistance
Normalized On Resistancevs TemperatureNormalized Gate Thereshold Voltagevs Temp.
Capacitance VariationsGate Chargevs Gate-source Voltage
STP16NK60Z- STB16NK60Z-S- STW16NK60Z6/11
Normalized BVDSSvs TemperatureSource-drain Diode Forward Characteristics
Maximum
