STP16NF06 ,N-CHANNEL 60VSTP16NF06STP16NF06FPN-CHANNEL 60V - 0.08 Ω - 16A TO-220/TO-220FPSTripFET™ II POWER MOSFETTYPE V R I ..
STP16NF06FP ,N-CHANNEL 60VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STP16NF06L ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP16NF06L STP16NF06LFPV Drain-source Voltage (V ..
STP16NK60Z ,N-CHANNEL 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)600 VDS GSV Drain-g ..
STP16NK65Z ,N-CHANNEL 650 VAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 650 VDS GSV Drain ..
STP16NS25 ,N-CHANNEL 250V 0.23 OHM 16A TO-220/TO-220FP MESH OVERLAY MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP16NS25 STP16NS25FPV Drain-source Voltage (V = ..
SZ3536 , SURFACE MOUNT SILICON ZENER DIODES
SZ4510 , SURFACE MOUNT SILICON ZENER DIODES
SZ4511 , SURFACE MOUNT SILICON ZENER DIODES
SZ4512 , SURFACE MOUNT SILICON ZENER DIODES
SZ4513 , SURFACE MOUNT SILICON ZENER DIODES
SZ4514 , SURFACE MOUNT SILICON ZENER DIODES
STP16NF06-STP16NF06FP
N-CHANNEL 60V
1/9April 2002
STP16NF06
STP16NF06FPN-CHANNEL 60V - 0.08 Ω - 16A TO-220/TO-220FP
STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.08Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE AT 100 oC APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS MOTOR CONTROL, AUDIO AMPLIFIERS HIGH CURRENT, HIGH SWITCHING SPEED SOLENOID AND RELAY DRIVERS DC-DC & DC-AC CONVERTERS AUTOMOTIVE ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area.
(*) Current Limited by package’s thermal resistance
(1) ISD ≤ 16A, di/dt ≤ 200A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj = 25 oC, ID = 8A, VDD = 30V
STP16NF06/FP
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (*)
DYNAMIC
3/9
STP16NF06/FPSWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STP16NF06/FP Thermal Impedance for TO-220FP
5/9
STP16NF06/FPGate Charge vs Gate-source Voltage Capacitance Variations
STP16NF06/FP
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
