STP16NE06FP ,N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFETSTP16NE06STP16NE06FP®N - CHANNEL 60V - 0.08 Ω - 16A - TO-220/TO-220FPSTripFET™ POWER MOSFETPRELIMIN ..
STP16NE06L ,N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFETSTP16NE06LSTP16NE06L/FPN - CHANNEL ENHANCEMENT MODESINGLE FEATURE SIZE™ POWER MOSFETTARGET DATATYP ..
STP16NF06 ,N-CHANNEL 60VSTP16NF06STP16NF06FPN-CHANNEL 60V - 0.08 Ω - 16A TO-220/TO-220FPSTripFET™ II POWER MOSFETTYPE V R I ..
STP16NF06FP ,N-CHANNEL 60VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STP16NF06L ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP16NF06L STP16NF06LFPV Drain-source Voltage (V ..
STP16NK60Z ,N-CHANNEL 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)600 VDS GSV Drain-g ..
SZ3536 , SURFACE MOUNT SILICON ZENER DIODES
SZ4510 , SURFACE MOUNT SILICON ZENER DIODES
SZ4511 , SURFACE MOUNT SILICON ZENER DIODES
SZ4512 , SURFACE MOUNT SILICON ZENER DIODES
SZ4513 , SURFACE MOUNT SILICON ZENER DIODES
SZ4514 , SURFACE MOUNT SILICON ZENER DIODES
STP16NE06-STP16NE06FP
N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
STP16NE06
STP16NE06FPN - CHANNEL 60V - 0.08 Ω - 16A - TO-220/TO-220FP
STripFET POWER MOSFET
PRELIMINARY DATA TYPICAL RDS(on) = 0.08 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175o C OPERATING TEMPERATURE HIGH dV/dt CAPABILITY APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size"
process whereby a single body is implanted on a
strip layout structure. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS DC MOTOR CONTROL DC-DC & DC-AC CONVERTERS SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area (1) ISD ≤ 16 A, di/dt ≤ 200 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
’ New RDS (on) spec. starting from JULY 98
June 1998
1/9
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STP16NE06/FP2/9
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area for TO-220 Safe Operating Area for TO-220FP
STP16NE06/FP3/9
Thermal Impedance for TO-220
Output Characteristics
Transconductance
Thermal Impedance for TO-220FP
Transfer Characteristics
Static Drain-source On Resistance
STP16NE06/FP4/9
Gate Charge vs Gate-source Voltage
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Capacitance Variations
Normalized On Resistance vs Temperature
STP16NE06/FP5/9
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits ForResistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load SwitchingAnd Diode Recovery Times
STP16NE06/FP6/9
