STF16N65M5 ,N-channel 650 V, 0.230 Ohm, 12 A MDmesh(TM) V Power MOSFET in TO-220FPAbsolute maximum ratingsValueSymbol Parameter UnitTO-220, I²PAK, TO-220FPIPAK, TO-247V Drain-source ..
STF16NF25 ,N-channel 250 V, 0.195 Ohm, 14 A STripFET(TM) II Power MOSFET in TO-220FP packageAbsolute maximum ratingsValueSymbol Parameter UnitDPAKTO-220FPTO-220V Drain-source voltage 250 VDSV ..
STF17NF25 ,N-channel 250 V, 0.14 Ohm, 17 A, TO-220FP STripFET(TM) II Power MOSFETapplications with low gate charge driving requirements.Table 1. Device summaryOrder codes Marking P ..
STF18NM60N ,N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-220FPAbsolute maximum ratingsValueSymbol Parameter UnitD²PAK, TO-220FPTO-220,TO-247V Drain-source voltag ..
STF18NM80 ,N-channel 800 V, 0.25 Ohm, 17 A, MDmesh(TM) Power MOSFET in TO-220FP packageElectrical characteristics(T = 25 °C unless otherwise specified)CASE Table 5. On/off statesSymbol P ..
STF19NF20 ,N-channel 200 V, 0.15 Ohm typ., 15 A MESH OVERLAY(TM) Power MOSFET in TO-220FP packageElectrical characteristics (curves) . . . . . 73 Test circuit . . . . . . . 104 Pac ..
SUM110N08-07L ,N-Channel 75-V (D-S) 175C MOSFETS-21717—Rev. A, 07-Oct-021SUM110N08-07LNew ProductVishay SiliconixSPECIFICATIONS (T =25C UNLESS OT ..
SUM110N10-08 ,N-Channel 100-V (D-S) 200C MOSFETS-22126—Rev. A, 25-Nov-02 1SUM110N10-08New ProductVishay SiliconixSPECIFICATIONS (T =25C UNLESS OT ..
SUM110N10-09 ,N-Channel 100-V (D-S) 200C MOSFETSUM110N10-09New ProductVishay SiliconixN-Channel 100-V (D-S) 200C MOSFET TrenchFET Power ..
SUM110N10-09 ,N-Channel 100-V (D-S) 200C MOSFETS-04970—Rev. B, 29-Oct-01 1SUM110N10-09New ProductVishay Siliconix ..
SUM110N10-09-E3 , N-Channel 100-V (D-S) 200C MOSFET
SUM110P06-07L ,P-Channel 60-V (D-S) 175C MOSFETS-40842—Rev. B, 03-May-041SUM110P06-07LVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NO ..
STF16N65M5-STP16N65M5
N-channel 650 V, 0.230 Ohm, 12 A MDmesh(TM) V Power MOSFET in TO-220FP
October 2011 Doc ID 15210 Rev 4 1/20
STF16N65M5, STI16N65M5
STP16N65M5,STU16N65M5,STW16N65M5N-channel 650 V , 0.230 Ω , 12 A MDmesh™ V Power MOSFET
in TO-220FP , I²P AK, TO-220, IP AK, TO-247
Features Worldwide best RDS(on) Higher VDSS rating High dv/dt capability Excellent switching performance Easy to drive 100% avalanche tested
Applications Switching applications
DescriptionThese devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1. Device summary
Contents STF/I/P/U/W16N65M52/20 Doc ID 15210 Rev 4
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
STF/I/P/U/W16N65M5 Electrical ratings
Doc ID 15210 Rev 4 3/20
1 Electrical ratings
Table 2. Absolute maximum ratings Limited by maximum junction temperature Pulse width limited by safe operating area ISD ≤ 12 A, di/dt ≤ 400 A/µs, VDD = 400 V, VPeak < V(BR)DSS
Table 3. Thermal data
Electrical characteristics STF/I/P/U/W16N65M5
4/20 Doc ID 15210 Rev 4
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Table 5. Dynamic Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS
STF/I/P/U/W16N65M5 Electrical characteristics
Doc ID 15210 Rev 4 5/20
Table 6. Switching times
Table 7. Source drain diode Pulse width limited by safe operating area Pulsed: pulse duration = 300 µs, duty cycle 1.5%
