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STW14NK60ZSTN/a100avaiN-CHANNEL 600V
STB14NK60ZSTN/a144avaiN-CHANNEL 600V
STB14NK60ZT4STN/a42014avaiN-CHANNEL 600V
STP14NK60ZSTN/a10avaiN-CHANNEL 600V
STP14NK60ZFP |STP14NK60ZFPST N/a400avaiN-CHANNEL 600V


STB14NK60ZT4 ,N-CHANNEL 600VFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
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STB15NK50ZT4 ,N-CHANNEL 500V 0.30 OHM 14A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP15NK50ZSTB15NK50Z STP15NK50ZFP STW15NK50ZSTB1 ..
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STB14NK60Z-STB14NK60ZT4-STP14NK60Z-STP14NK60ZFP -STW14NK60Z
N-CHANNEL 600V
1/14January 2003
STP14NK60Z- STP14NK60ZFP
STB14NK60Z- STB14NK60Z-1- STW14NK60Z

N-CHANNEL 600V-0.45Ω-13.5A TO-220/FP/D2 PAK/I2 PAK/TO-247
Zener-Protected SuperMESH™Power MOSFET TYPICAL RDS(on)= 0.45Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION

The SuperMESH™ seriesis obtained through an
extreme optimizationof ST’s well established strip-
based PowerMESH™ layout.In additionto pushing
on-resistance significantly down, special careis tak-to ensurea very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full rangeof high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC LIGHTING
ORDERING INFORMATION
STP14NK60Z- STP14NK60ZFP- STB14NK60Z- STB14NK60Z-1- STW14NK60Z
2/14
ABSOLUTE MAXIMUM RATINGS
) Pulse width limitedby safe operating area
(1)ISD ≤13.5A, di/dt ≤200 A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX.
(*) Limited onlyby maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionallybe
applied from gateto source.In this respect the Zener voltageis appropriateto achievean efficient and
cost-effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the
usageof external components.
3/14
STP14NK60Z- STP14NK60ZFP- STB14NK60Z- STB14NK60Z-1- STW14NK60Z
ELECTRICAL CHARACTERISTICS
(TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
STP14NK60Z- STP14NK60ZFP- STB14NK60Z- STB14NK60Z-1- STW14NK60Z
4/14
Safe Operating Area For TO-247 Thermal Impedance For TO-247
Safe Operating Area For TO-220FP
Safe Operating Area For TO-220/D2PAK/I2PAK
Thermal Impedance For TO-220FP
5/14
STP14NK60Z- STP14NK60ZFP- STB14NK60Z- STB14NK60Z-1- STW14NK60Z
Transfer Characteristics
Gate Chargevs Gate-source Voltage
Transconductance Static Drain-source On Resistance
Output Characteristics
Capacitance Variations
STP14NK60Z- STP14NK60ZFP- STB14NK60Z- STB14NK60Z-1- STW14NK60Z
6/14
Source-drain Diode Forward Characteristics
Maximum Avalanche Energyvs Temperature
Normalized
Normalized On Resistancevs TemperatureNormalized Gate Threshold Voltagevs Temp.
7/14
STP14NK60Z- STP14NK60ZFP- STB14NK60Z- STB14NK60Z-1- STW14NK60Z
Fig.5:
Test Inductive
Fig.4:
Gate Charge test CircuitFig.
Fig.3:
Switching
Resistive Load
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