STP14NF10FP ,N-CHANNEL 100V 0.115 OHM 15A D2PAK/TO-220/TO-220FP LOW GATE CHARGE STRIPFET II POWER MOSFETSTB14NF10STP14NF10 STP14NF10FP2N-CHANNEL 100V - 0.115 Ω - 15A TO-220/TO-220FP/D PAKLOW GATE CHARGE ..
STP14NF12FP ,N-CHANNEL 120V
STP14NK50Z ,N-CHANNEL 500V 0.34 OHM 14A TO-220/TO-220FP/D2PAK/I2PAK/TO247 ZENER-PROTECTED SUPERMESH POWER MOSFETFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STP14NK50ZFP ,N-CHANNEL 500V 0.34 OHM 14A TO-220/TO-220FP/D2PAK/I2PAK/TO247 ZENER-PROTECTED SUPERMESH POWER MOSFETapplications. Such series comple-ments ST full range of high voltage MOSFETs in-cluding revolutiona ..
STP14NK50ZFP. ,N-CHANNEL 500V 0.34 OHM 14A TO-220/TO-220FP/D2PAK/I2PAK/TO247 ZENER-PROTECTED SUPERMESH POWER MOSFETAPPLICATIONS■ HIGH CURRENT, HIGH SPEED SWITCHING■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND P ..
STP14NK60Z ,N-CHANNEL 600Vapplications. Such series comple-ments ST full range of high voltage MOSFETs in-cluding revolutiona ..
SZ3536 , SURFACE MOUNT SILICON ZENER DIODES
SZ4510 , SURFACE MOUNT SILICON ZENER DIODES
SZ4511 , SURFACE MOUNT SILICON ZENER DIODES
SZ4512 , SURFACE MOUNT SILICON ZENER DIODES
SZ4513 , SURFACE MOUNT SILICON ZENER DIODES
SZ4514 , SURFACE MOUNT SILICON ZENER DIODES
STP14NF10-STP14NF10FP
N-CHANNEL 100V 0.115 OHM 15A D2PAK/TO-220/TO-220FP LOW GATE CHARGE STRIPFET II POWER MOSFET
1/11June 2002
STB14NF10
STP14NF10 STP14NF10FPN-CHANNEL 100V - 0.115 Ω - 15A TO-220/TO-220FP/D2 PAK
LOW GATE CHARGE STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.115 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED
CHARACTERIZATION SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTIONThis MOSFET series realized with STMicroelectronics
unique STripFET™ process has specifically been de-
signed to minimize input capacitance and gate charge. It
is therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended for
any applications with low gate drive requirements.
APPLICATIONS HIGH-EFFICIENCY DC-DC CONVERTERS UPS AND MOTOR CONTROL
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area. (1) ISD ≤14A, di/dt ≤300A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 15A, VDD= 50V
STB14NF10 STP14NF10 STP14NF10FP
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (*)
DYNAMIC
3/11
STB14NF10 STP14NF10 STP14NF10FPSWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STB14NF10 STP14NF10 STP14NF10FPThermal Impedance Thermal Impedance for TO-220FP
5/11
STB14NF10 STP14NF10 STP14NF10FPGate Charge vs Gate-source Voltage Capacitance Variations
STB14NF10 STP14NF10 STP14NF10FP
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
