STP11NM60N ,N-channel 600 V, 0.37 Ohm, 10 A MDmesh(TM) II Power MOSFET in TO-220 packageElectrical characteristics(T =25 °C unless otherwise specified)CASE Table 5. On/off statesSymbol Pa ..
STP11NM60ND ,N-channel 600VAbsolute maximum ratingsValueSymbol Parameter UnitDPAK/I²PAK, TO-220FPTO-220/IPAK V Drain-source vo ..
STP11NM80 ,N-CHANNEL 800 VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STP120NF10 ,N-CHANNEL 100Vapplications with low gate drive requirements.
STP12A60 , Bi-Directional Triode Thyristor
STP12A60 , Bi-Directional Triode Thyristor
SZ3536 , SURFACE MOUNT SILICON ZENER DIODES
SZ4510 , SURFACE MOUNT SILICON ZENER DIODES
SZ4511 , SURFACE MOUNT SILICON ZENER DIODES
SZ4512 , SURFACE MOUNT SILICON ZENER DIODES
SZ4513 , SURFACE MOUNT SILICON ZENER DIODES
SZ4514 , SURFACE MOUNT SILICON ZENER DIODES
STP11NM60N
N-channel 600 V, 0.37 Ohm, 10 A MDmesh(TM) II Power MOSFET in TO-220 package
March 2009 Rev 5 1/20
STx11NM60NN-channel 600 V , 0.37 Ω , 10 A MDmesh™ II Power MOSFET
TO-220, TO-220FP, I2P AK, IP AK, DP AK, D2 PAK
Features 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
Application Switching applications
DescriptionThis series of devices is designed using the
second generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Figure 1. Internal schematic diagram Limited only by maximum temperature allowed
Table 1. Device summary
Contents STx11NM60N2/20
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
STx11NM60N Electrical ratings
3/20
1 Electrical ratings
Table 2. Absolute maximum ratings Limited only by maximum temperature allowed Pulse width limited by safe operating area ISD ≤ 10 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS
Table 3. Thermal data
Table 4. Avalanche characteristics
Electrical characteristics STx11NM60N
4/20
2 Electrical characteristics
(TCASE=25 °C unless otherwise specified)
Table 5. On/off states Characteristic value at turn off on inductive load
Table 6. Dynamic Pulsed: pulse duration = 300µs, duty cycle 1.5% Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
STx11NM60N Electrical characteristics
5/20
2.1 Electrical characteristics (curves)
Table 7. Switching times
Table 8. Source drain diode Pulsed: pulse duration = 300µs, duty cycle 1.5%
Figure 2. Safe operating area for TO-220,
I²PAK, D²PAK
Figure 3. Thermal impedance for TO-220,
I²PAK, D²PAK
Electrical characteristics STx11NM60N
6/20
Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP
Figure 6. Safe operating area for DPAK, IPAK Figure 7. Thermal impedance for DPAK, IPAK
STx11NM60N Electrical characteristics
7/20
Figure 8. Output characteristics Figure 9. Transfer characteristics
Figure 10. Transconductance Figure 11. Static drain-source on resistance
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
Electrical characteristics STx11NM60N
8/20
Figure 14. Normalized gate threshold voltage
vs temperature
Figure 15. Normalized on resistance vs
temperature
Figure 16. Source-drain diode forward
characteristics
Figure 17. Normalized BVDSS vs temperature
STx11NM60N Test circuits
9/20 Test circuits
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
Figure 20. Test circuit for inductive load
switching and diode recovery times
Figure 21. Unclamped inductive load test
circuit
Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform
Package mechanical data STx11NM60N
10/20 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: . ECOPACK
is an ST trademark.
