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STP11NM60AFPST N/a12000avaiN-CHANNEL 600V 0.4 OHM 11A TO-220/TO-220FP/I2PAK MDMESH POWER MOSFET


STP11NM60AFP ,N-CHANNEL 600V 0.4 OHM 11A TO-220/TO-220FP/I2PAK MDMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP11NM60ASTP11NM60AFPSTB11NM60A-1V Drain-source ..
STP11NM60FDFP ,N-CHANNEL 600V 0.40 OHM 11A TO-220/TO-220FP FDMESH POWER MOSFET
STP11NM60FP ,N-CHANNEL 600VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STP11NM60N ,N-channel 600 V, 0.37 Ohm, 10 A MDmesh(TM) II Power MOSFET in TO-220 packageElectrical characteristics(T =25 °C unless otherwise specified)CASE Table 5. On/off statesSymbol Pa ..
STP11NM60ND ,N-channel 600VAbsolute maximum ratingsValueSymbol Parameter UnitDPAK/I²PAK, TO-220FPTO-220/IPAK V Drain-source vo ..
STP11NM80 ,N-CHANNEL 800 VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
SZ3536 , SURFACE MOUNT SILICON ZENER DIODES
SZ4510 , SURFACE MOUNT SILICON ZENER DIODES
SZ4511 , SURFACE MOUNT SILICON ZENER DIODES
SZ4512 , SURFACE MOUNT SILICON ZENER DIODES
SZ4513 , SURFACE MOUNT SILICON ZENER DIODES
SZ4514 , SURFACE MOUNT SILICON ZENER DIODES


STP11NM60AFP
N-CHANNEL 600V 0.4 OHM 11A TO-220/TO-220FP/I2PAK MDMESH POWER MOSFET
1/11March 2002
STP11NM60A
STP11NM60AFP - STB11NM60A-1

N-CHANNEL 600V - 0.4Ω - 11A TO-220/TO-220FP/I2 PAK
MDmesh™Power MOSFET TYPICAL RDS(on) = 0.4Ω HIGH dv/dt LOW INPUT CAPACITANCE AND GATE
CHARGE LOW GATE INPUT RESISTANCE
DESCRIPTION

The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt. The adoption
of the Company’s proprietary strip technique yields
overall dynamic performance that is significantly
better than that of similar competition’s products.
APPLICATIONS

The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ORDERING INFORMATION
STP11NM60A/STP11NM60AFP/STB11NM60A-1
ABSOLUTE MAXIMUM RATINGS
) Pulse width limited by safe operating area
(1) ISD ≤11A, di/dt ≤200A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA

ON/OFF
3/11
STP11NM60A/STP11NM60AFP/STB11NM60A-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
STP11NM60A/STP11NM60AFP/STB11NM60A-1
Thermal Impedance for TO-220 / I2PAK
Transfer CharacteristicsOutput Characteristics
Safe Operating Area for TO-220FPSafe Operating Area for TO-220 / I2PAK
Thermal Impedance for TO-220FP
5/11
STP11NM60A/STP11NM60AFP/STB11NM60A-1
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Capacitance VariationsGate Charge vs Gate-source Voltage
Transconductance Static Drain-source On Resistance
STP11NM60A/STP11NM60AFP/STB11NM60A-1
Source-drain Diode Forward Characteristics
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