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STB11NK40ZSTN/a4800avaiN-CHANNEL 400V 0.49 OHM 9A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET
STP11NK40ZSTMN/a20avaiN-CHANNEL 400V 0.49 OHM 9A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET
STP11NK40ZFPSTN/a3000avaiN-CHANNEL 400V 0.49 OHM 9A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET


STB11NK40Z ,N-CHANNEL 400V 0.49 OHM 9A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP11NK40ZSTP11NK40ZFPSTB11NK40ZV Drain-source V ..
STB11NK40ZT4 ,N-CHANNEL 400V 0.49 OHM 9A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP11NK40ZSTP11NK40ZFPSTB11NK40ZV Drain-source V ..
STB11NK50Z ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit2TO-220FPTO-220 / D PAKV Drain-source Voltage (V ..
STB11NM60 ,N-CHANNEL 600VSTP11NM60 - STP11NM60FPSTB11NM60 - STB11NM60-12 2N-CHANNEL 600V - 0.4Ω-11A TO-220/TO-220FP/D PAK/I ..
STB11NM60-1 ,N-CHANNEL 600VAPPLICATIONSThe MDmesh™ family is very suitable for increasingpower density of high voltage convert ..
STB11NM60A-1 ,N-CHANNEL 600V 0.4 OHM 11A TO-220/TO-220FP/I2PAK MDMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP11NM60ASTP11NM60AFPSTB11NM60A-1V Drain-source ..
STU6NA90 ,NSTU6NA90N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) D ..
STU7NM60N ,N-channel 600 V, 5 A, 0.84 Ohm MDmesh(TM) II Power MOSFET in IPAK packageElectrical characteristics(T = 25 °C unless otherwise specified)CTable 5. On /off statesSymbol Para ..
STU7NM60N ,N-channel 600 V, 5 A, 0.84 Ohm MDmesh(TM) II Power MOSFET in IPAK packageElectrical characteristics (curves) . . . . 63 Test circuits . . . . . . 94 Pac ..
STU85N3LH5 ,N-channel 30 V, 0.0042 Ohm , 80 A, DPAK, TO-220, IPAKElectrical characteristics(T = 25 °C unless otherwise specified)CASE Table 4. StaticSymbol Paramete ..
STU9NB80 ,N-CHANNEL 800VSTU9NB80®N-CHANNEL 800V - 0.85Ω - 9.3A - TO-247PowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTU9NB80 8 ..
STU9NC80ZI ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON (RESISTIVE LOAD)Symbol Parameter Test Conditions ..


STB11NK40Z-STP11NK40Z-STP11NK40ZFP
N-CHANNEL 400V 0.49 OHM 9A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET
1/12July 2002
STP11NK40Z - STP11NK40ZFP
STB11NK40Z

N-CHANNEL 400V - 0.49Ω - 9A TO-220/TO-220FP/D2 PAK
Zener-Protected SuperMESH™Power MOSFET TYPICAL RDS(on) = 0.49 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION

The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC LIGHTING
ORDERING INFORMATION
STP11NK40Z - STP11NK40ZFP - STB11NK40Z
ABSOLUTE MAXIMUM RATINGS
) Pulse width limited by safe operating area
(1) ISD ≤9A, di/dt ≤200A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
STP11NK40Z - STP11NK40ZFP - STB11NK40Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
STP11NK40Z - STP11NK40ZFP - STB11NK40Z
Safe Operating Area For TO-220FP
Safe Operating Area For TO-220/D2PAK
Transfer CharacteristicsOutput Characteristics
STP11NK40Z - STP11NK40ZFP - STB11NK40Z
Normalized On Resistance vs Temperature
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Normalized Gate Threshold Voltage vs Temp.
Capacitance Variations
Transconductance
STP11NK40Z - STP11NK40ZFP - STB11NK40Z
Source-drain Diode Forward Characteristics
Maximum Avalanche Energy vs Temperature
Normalized BVDSS vs Temperature
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