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STB100NF04STN/a4800avaiN-CHANNEL 40V 0.0043 OHM 120A TO-220/D2PAK/I2PAK STRIPFET II POWER MOSFET
STP100NF04STN/a10avaiN-CHANNEL 40V 0.0043 OHM 120A TO-220/D2PAK/I2PAK STRIPFET II POWER MOSFET


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STB100NF04-STP100NF04
N-CHANNEL 40V 0.0043 OHM 120A TO-220/D2PAK/I2PAK STRIPFET II POWER MOSFET
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AUTOMOTIVE SPECIFIC

February 2002
STP100NF04
STB100NF04, STB100NF04-1

N-CHANNEL 40V - 0.0043Ω - 120A TO-220/D2 PAK/I2 PAK
STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.0043 Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED
DESCRIPTION

This Power Mosfet is the latest development of ST-
Microelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable man-
ufacturing reproducibility.
APPLICATIONS
HIGH CURRENT, HIGH SWITCHING SPEED MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CONVERTERS SOLENOID AND RELAY DRIVERS
ORDERING INFORMATION
STP100NF04, STB100NF04, STB100NF04-1
ABSOLUTE MAXIMUM RATINGS
) Pulse width limited by safe operating area
(1) ISD ≤120A, di/dt ≤300A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj = 25°C, Id = 60A, VDD=30 V
(#) Current Limited by Package
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

ON/OFF
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STP100NF04, STB100NF04, STB100NF04-1
ELECTRICAL CHARACTERISTICS (CONTINUED)

DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
STP100NF04, STB100NF04, STB100NF04-1
Max Id Current vs TcPower Derating vs Tc
Transconductance
Transfer Characteristics
Static Drain-source On Resistance
Output Characteristics
5/15
STP100NF04, STB100NF04, STB100NF04-1
Gate Charge vs Gate-source Voltage Capacitance Variations
Normalized On Resistance vs Temperature
Normalized Breakdown voltage vs Temperature
Normalized Gate Thereshold Voltage vs Temp.
Source-drain Diode Forward Characteristics
STP100NF04, STB100NF04, STB100NF04-1
Thermal Impedance
Thermal Resistance Rthj-a vs PCB Copper Area Max Power Dissipation vs PCB Copper Area
Safe Operating Area
7/15
STP100NF04, STB100NF04, STB100NF04-1
Allowable Iav vs. Time in Avalanche

The previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive,
under the following conditions:
PD(AVE) = 0.5 * (1.3 * BVDSS * IAV)
EAS(AR) = PD(AVE) * tAV
Where:
IAV is the Allowable Current in Avalanche
PD(AVE) is the Average Power Dissipation in Avalanche (Single Pulse)
tAV is the Time in Avalanche
To derate above 25 °C, at fixed IAV, the following equation must be applied:
IAV = 2 * (Tjmax - TCASE) / (1.3 * BVDSS * Zth)
Where:
Zth = K * Rth is the value coming from Normalized Thermal Response at fixed pulse width equal to TAV.
STP100NF04, STB100NF04, STB100NF04-1
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