STL90N3LLH6 ,N-channel 30 V, 0.0038 Ohm, 24 A PowerFLAT(TM) 5x6 STripFET(TM) VI DeepGATE(TM) Power MOSFETElectrical characteristics(T = 25 °C unless otherwise specified)CASE Table 5. On/off statesSymbol P ..
STL9NK30Z ,N-CHANNEL 300VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)300 VDS GSV Drain-g ..
STLA01PUR ,50 mA stand-alone linear LED driverPin configuration Figure 2. Pin connections (top view)Table 2. Pin descriptionPin n° Symbol Name a ..
STLC1502D ,STLC1502Block diagram.......45 System Overview .45.1 ARM7 domain .....45.2 D950 domain.......55.3 Clocks .. ..
STLC2150 ,BLUETOOTH RADIO TRANSCEIVERElectrical characteristics, rated for the operating rangeSymbol Parameter Min Max UnitV High Level ..
STLC2415 ,BLUETOOTH BASEBAND WITH INTEGRATED FLASHAbsolute Maximum RatingsSymbol Conditions Min Max UnitV Supply voltage baseband core V 0.5 2.5 VDD ..
SY10E151JI , 6-BIT D REGISTER
SY10E157JCTR , QUAD 2:1 MULTIPLEXER
SY10E166JC , 9-BIT MAGNITUDE COMPARATOR
SY10E167JC , 6-BIT 2:1 MUX-REGISTER
SY10E171JC , 3-BIT 4:1 MULTIPLEXER
SY10E171JC , 3-BIT 4:1 MULTIPLEXER
STL90N3LLH6
N-channel 30 V, 0.0038 Ohm, 24 A PowerFLAT(TM) 5x6 STripFET(TM) VI DeepGATE(TM) Power MOSFET
September 2013 DocID15573 Rev 4 1/16
STL90N3LLH6N-channel 30 V , 0.0038 Ω typ., 24 A STripFET™ VI DeepGATE™
Power MOSFET in PowerFLAT™ 5x6 package
Datasheet - production data
Figure 1. Internal schematic diagram
Features RDS(on) * Qg industry benchmark Extremely low on-resistance R DS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate charge
Applications Switching applications
DescriptionThis device is an N-channel Power MOSFET
developed using the 6th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest RDS(on) in all packages. The value is rated according Rthj-pcb
Table 1. Device summary
Contents STL90N3LLH62/16 DocID15573 Rev 4
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
DocID15573 Rev 4 3/16
STL90N3LLH6 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings The value is rated according to Rthj-c The value is rated according to Rthj-pcb Pulse width limited by safe operating area
Table 3. Thermal resistance When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
Table 4. Avalanche characteristics
Electrical characteristics STL90N3LLH6
4/16 DocID15573 Rev 4
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5. On/off states
Table 6. Dynamic
Table 7. Switching times
DocID15573 Rev 4 5/16
STL90N3LLH6 Electrical characteristics
Table 8. Source drain diode Pulse width limited by safe operating area Pulsed: pulse duration=300µs, duty cycle 1.5%
Electrical characteristics STL90N3LLH6
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on-resistance
DocID15573 Rev 4 7/16
STL90N3LLH6 Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage vs
temperature
Figure 11. Normalized on-resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics
Test circuits STL90N3LLH6 Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped inductive load test circuit
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
