STL6NK55Z ,N-CHANNEL 550VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)550 VDS GSV Drain- ..
STL70N4LLF5 ,Automotive-grade N-channel 40 V, 6.1 mOhm, 18 A STripFET(TM) V Power MOSFET in a PowerFLAT(TM) 5x6 packageElectrical characteristics(T = 25 °C unless otherwise specified)CASE Table 5. On/off statesSymbol P ..
STL71 , MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
STL72 , MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
STL73 ,medium Voltage Fast Switching NPN Power TransistorAPPLICATIONSn COMPACT FLUORESCENT LAMPS (CFLS) TO-92 DESCRIPTIONFigure 2: Interna ..
STL75NH3LL , N-channel 30 V, 0.004 Ω, 20 A, PowerFLAT™ (6x5) ultra low gate charge STripFET™ Power MOSFET
SY10E107JC , QUINT 2-INPUT XOR/XNOR GATE
SY10E111AEJC , 5V/3.3V 1:9 DIFFERENTIAL CLOCK DRIVER (w/ENABLE)
SY10E111AEJC , 5V/3.3V 1:9 DIFFERENTIAL CLOCK DRIVER (w/ENABLE)
SY10E111JY , 1:9 DIFFERENTIAL CLOCK DRIVER WITH ENABLE
SY10E111JY , 1:9 DIFFERENTIAL CLOCK DRIVER WITH ENABLE
SY10E111JY , 1:9 DIFFERENTIAL CLOCK DRIVER WITH ENABLE
STL6NK55Z
N-CHANNEL 550V
1/8July 2002
STL6NK55ZN-CHANNEL 550V - 1.2Ω - 5.2A PowerFLAT™
Zener-Protected SuperMESH™Power MOSFET TYPICAL RDS(on) = 1.2 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTIONThe SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS LIGHTING IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
ORDERING INFORMATION
STL6NK55Z
ABSOLUTE MAXIMUM RATINGS
THERMAL DATANote:1. The value is rated according to Rthj-F. When Mounted on FR-4 Board of 1inch2 , 2 oz Cu Pulse width limited by safe operating area ISD<5.7A, di/dt<300A/μs, VDD
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
3/8
STL6NK55Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
STL6NK55Z
Gate Charge vs Gate-source Voltage
Static Drain-source On Resistance
Transfer CharacteristicsOutput Characteristics
Transconductance
Capacitance Variations
5/8
STL6NK55Z
Normalized BVDSS vs TemperatureSource-drain Diode Forward Characteristics
Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.
STL6NK55Z
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
