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Partno	Mfg	Dc	Qty	Available	Descript
STL20NM20N	ST	N/a	1204	avai	N-CHANNEL 200V 0.11 OHM 20A POWERFLAT ULTRA LOW GATE CHARGE MDMESH II MOSFET

STL20NM20N ,N-CHANNEL 200V 0.11 OHM 20A POWERFLAT ULTRA LOW GATE CHARGE MDMESH II MOSFETAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 200 VDS GSV Drain ..
STL28NF3LL ,N-CHANNEL 30V 0.0055 OHM 28A POWERFLAT LOW GATE CHARGE STRIPFET II MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STL34NF06 ,N-CHANNEL 60V 0.024 OHM 34A POWERFLAT LOW GATE CHARGE STRIPFET II MOSFETELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STL35NF10 ,N-CHANNEL 100V 0.025 OHM 35A POWERFLAT LOW GATE CHARGE STRIPFET II MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STL50NH3LL ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: On /OffSymbol Parameter ..
STL5NK65Z ,N-CHANNEL 650V 1.5 OHM 4.2A POWERFLAT ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)650 VDS GSV Drain- ..
SY10474-4FCF , 1K x 4 ECL RAM
SY10474-5FCS , 1K x 4 ECL RAM
SY10E104JY , QUINT 2-INPUT AND/NAND GATE
SY10E104JY , QUINT 2-INPUT AND/NAND GATE
SY10E107JC , QUINT 2-INPUT XOR/XNOR GATE
SY10E111AEJC , 5V/3.3V 1:9 DIFFERENTIAL CLOCK DRIVER (w/ENABLE)

STL20NM20N
N-CHANNEL 200V 0.11 OHM 20A POWERFLAT ULTRA LOW GATE CHARGE MDMESH II MOSFET
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TARGET SPECIFICATION
February 2005
STL20NM20N
N-CHANNEL 200V - 0.080Ω - 20A PowerFLAT™
ULTRA LOW GATE CHARGE MDmesh™ II MOSFET
Rev. 2
STL20NM20N
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Table 3: Absolute Maximum ratings
Table 4: Thermal Data
Table 5: Avalanche Characteristics
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
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STL20NM20N
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
(*) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
Table 8: Source Drain Diode
Note:1. Current Limited by Package. The value is rated according to Rthj-c. When Mounted on FR-4 Board of 1inch2 , 2 oz Cu Pulse width limited by safe operating area The value is rated according to Rthj-c. ISD ≤ 20A, di/dt ≤ 400A/µs, V DD ≤ V(BR)DSS, TJ ≤ TJMAX Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
STL20NM20N
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Figure 3: Unclamped Inductive Load Test Cir-
cuit
Figure 5: Test Circuit For Inductive Load
Switching and Diode Recovery Times
Figure 6: Unclamped Inductive Wafeform

Figure 7: Gate Charge Test Circuit

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STL20NM20N
STL20NM20N
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Table 9: Revision History

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