STH13NB60FI ,N-CHANNEL 600VSTW13NB60STH13NB60FI®N - CHANNEL 600V - 0.48Ω - 13A - TO-247/ISOWATT218PowerMESH™ MOSFETTYPE V R I ..
STH15NA50FI ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTH15NA50/FISTW15NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTH ..
STH16NA40FI ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTW16NA40STH16NA40FI®N - CHANNEL 400V - 0.21Ω - 16A - TO-247/ISOWATT218POWER MOS TRANSISTORSPRELIMI ..
STH18NB40FI ,N-CHANNEL 400VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STH51005N ,1300 nm Laser, High Power1300 nm Laser in Coaxial Package with SM-Pigtail, STH 51004XHigh Power STH 51005X• Designed for app ..
STH6NA80FI ,NSTW6NA80STH6NA80FI®N - CHANNEL 800V - 1.8Ω - 5.4A - TO-247/ISOWATT218FAST POWER MOS TRANSISTORTYPE ..
SVC201SPA ,Electronic Tuning SystemFeatures Package Dimensions•The SVC201SPA, 201Y are varactor diodes ofunit : mmhyper abrupt junctio ..
SVC201Y ,Varactor Diode (IOCAP) for FM Receiver Electronic TuningFeatures Package Dimensions · The SVC201SPA, 201Y are varactor diodes of hyperunit:mmabrupt junctio ..
SVC202 ,Varactor Diode (IOCAP) for FM Receiver Electronic TuningFeatures Package Dimensions · Twin type FM electronic tuning-use varactor diodeunit:mmwhich excels ..
SVC202SPA ,Varactor Diode (IOCAP) for FM Receiver Electronic TuningFeatures Package Dimensions•Twin type FM electronic tuning-use varactor diodeunit : mmwhich excels ..
SVC203CP ,Varactor Diode for FM Low-Voltage Electronic Tuning UseFeatures• Dual type with a good linearity of C-V characteristic. Excels in large input characterist ..
SVC203CP ,Varactor Diode for FM Low-Voltage Electronic Tuning UseAbsolute Maximum Ratings at Ta=25°C unitReverse Voltage V 16 VRJunction Temperature Tj 125 °CStorag ..
STH13NB60FI
N-CHANNEL 600V
STW13NB60
STH13NB60FIN - CHANNEL 600V - 0.48Ω - 13A - TO-247/ISOWATT218
PowerMESH MOSFET TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DESCRIPTION Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
January 2000
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area (1) ISD ≤ 13 A, di/dt ≤ 200 Α/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/9
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STW13NB60 STH13NB60FI2/9
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area for TO-247 Safe Operating Area for ISOWATT218
STW13NB60 STH13NB60FI3/9
Thermal Impedance for TO-247
Output Characteristics
Transconductance
Thermal Impedance for ISOWATT218
Transfer Characteristics
Static Drain-source On Resistance
STW13NB60 STH13NB60FI4/9
Gate Charge vs Gate-source Voltage
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Capacitance Variations
Normalized On Resistance vs Temperature
STW13NB60 STH13NB60FI5/9
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STW13NB60 STH13NB60FI6/9
