STGY40NC60VD ,N-CHANNEL 50AELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: OffSymbol Parameter Tes ..
STH10NC60FI ,N-CHANNEL 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTW10NC60 STH10NC60FIV Drain-source Voltage (V = ..
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STH15NA50FI ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTH15NA50/FISTW15NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTH ..
STH16NA40FI ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTW16NA40STH16NA40FI®N - CHANNEL 400V - 0.21Ω - 16A - TO-247/ISOWATT218POWER MOS TRANSISTORSPRELIMI ..
STH18NB40FI ,N-CHANNEL 400VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
SUV85N10-10 ,N-Channel 100-V (D-S) 175C MOSFETS-03601—Rev. B, 31-Mar-031SUV85N10-10New ProductVishay SiliconixSPECIFICATIONS (T =25C UNLESS OTHE ..
SUV90N06-05 ,N-Channel 60-V (D-S) 175C, MOSFETS-03079—Rev. A, 03-Feb-031SUV90N06-05New ProductVishay SiliconixSPECIFICATIONS (T =25C UNLESS OTHE ..
SVC201SPA ,Electronic Tuning SystemFeatures Package Dimensions•The SVC201SPA, 201Y are varactor diodes ofunit : mmhyper abrupt junctio ..
SVC201Y ,Varactor Diode (IOCAP) for FM Receiver Electronic TuningFeatures Package Dimensions · The SVC201SPA, 201Y are varactor diodes of hyperunit:mmabrupt junctio ..
SVC202 ,Varactor Diode (IOCAP) for FM Receiver Electronic TuningFeatures Package Dimensions · Twin type FM electronic tuning-use varactor diodeunit:mmwhich excels ..
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STGY40NC60VD
N-CHANNEL 50A
1/11July 2004
STGY40NC60VDN-CHANNEL 50A - 600V - Max247
Very Fast PowerMESH™ IGBT
Rev.8
STGY40NC60VD2/11
Table 3: Absolute Maximum ratings(1)Pulse width limited by max. junction temperature.
Table 4: Thermal Data
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: Off
Table 6: On(#) Calculated according to the iterative formula:CTC() JMAXTC–THJC– V CESAT MAX()TCIC,()×--------------- -----------------------------------------------------------------------------------=
3/11
STGY40NC60VD
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Table 8: Switching On 2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode,
the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C)
Table 9: Switching Off(3)Turn-off losses include also the tail of the collector current.
STGY40NC60VD4/11
Table 10: Collector-Emitter Diode
5/11
STGY40NC60VD
Figure 3: Output Characteristics
Figure 4: Transconductance
Figure 5: Collector-Emitter On Voltage vs Col-
lector Current
Figure 6: Transfer Characteristics
Figure 7: Collector-Emitter On Voltage vs Tem-
perature
Figure 8: Normalized Gate Threshold vs Tem-
perature
STGY40NC60VD6/11
Figure 9: Normalized Breakdown Voltage vs
Temperature
Figure 10: Capacitance Variations
Figure 11: Total Switching Losses vs Gate Re-
sistance
Figure 12: Gate Charge vs Gate-Emitter Volt-
age
ature
Figure 14: Total Switching Losses vs Collector
Current
