STGW35NC120HD ,35 AAbsolute maximum ratingsSymbol Parameter Value UnitV Collector-emitter voltage (V = 0) 1200 VCES GE ..
STGW38IH130D ,33 AElectrical characteristicsT = 25 °C unless otherwise specified.JTable 4. StaticSymbol Parameter Tes ..
STGW39NC60VD ,40 A, 600 V, very fast IGBTElectrical characteristics(T =25 °C unless otherwise specified)CASETable 4. StaticSymbol Parameter ..
STGW40N120KD ,40 A, 1200 V short circuit rugged IGBT with Ultrafast diodeElectrical characteristicsT = 25 °C unless otherwise specified.J Table 4. StaticSymbol Par ..
STGW40NC60V ,N-CHANNEL 40AELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STGWA19NC60HD ,31 A, 600 V, very fast IGBT with Ultrafast diodeAbsolute maximum ratingsSymbol Parameter Value UnitV Collector-emitter voltage (V = 0) 600 VCES GEC ..
SUT483J , NPN/PNP Epitaxial Planar Silicon Transistor
SUT488J , Epitaxial Planar Type PNP Silicon Transistor
SUT497H , NPN/PNP Epitaxial Planar Silicon Transistor
SUT509EF , NPN/PNP Epitaxial Planar Silicon Transistor
SUT562EF , Epitaxial planar NPN silicon transistor
SUU50N03-07 ,N-Channel 30-V (D-S) 175C MOSFETS-01707—Rev. A, 07-Aug-001SUU50N03-07Vishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTE ..
STGW35NC120HD
35 A
December 2013 DocID14378 Rev 3 1/13
STGW35NC120HD32 A, 1200 V
very fast IGBT
Datasheet - production data
Features Low on-losses Low on-voltage drop (VCE(sat)) High current capability IGBT co-packaged with ultrafast free-wheeling
diode Low gate charge Ideal for soft switching application
Application Induction heating High frequency inverters UPS
DescriptionThis IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
Table 1. Device summary
Contents STGW35NC120HD2/13 DocID14378 Rev 3
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
DocID14378 Rev 3 3/13
STGW35NC120HD Electrical ratings
1 Electrical ratings
Electrical characteristics STGW35NC120HD
4/13 DocID14378 Rev 3
2 Electrical characteristics
(Tj =25 °C unless otherwise specified)
Table 4. Static Pulse duration = 300 μs, duty cycle 1.5%
Table 5. Dynamic
DocID14378 Rev 3 5/13
STGW35NC120HD Electrical characteristics
Table 6. Switching on/off (inductive load)
Table 7. Switching energy (inductive load) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in
a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25 °C and 125 °C) Turn-off losses include also the tail of the collector current
Table 8. Collector-emitter diode
Electrical characteristics STGW35NC120HD
2.1 Electrical characteristics (curves)
Figure 2. Output characteristics Figure 3. Transfer characteristics
Figure 4. Transconductance Figure 5. Collector-emitter on voltage vs.
temperature
Figure 6. Gate charge vs. gate-source voltage Figure 7. Capacitance variations
STGW35NC120HD Electrical characteristics
Figure 8. Normalized gate threshold voltage vs.
temperature
Figure 9. Collector-emitter on voltage vs.
collector current
Figure 10. Normalized breakdown voltage vs.
temperature
Figure 11. Switching losses vs. temperature
Figure 12. Switching losses vs. gate resistance Figure 13. Switching losses vs. collector current
