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STGW30NB60HST N/a20avaiN-CHANNEL 30A


STGW30NB60H ,N-CHANNEL 30ASTGW30NB60H®N-CHANNEL 30A - 600V TO-247PowerMESH™ IGBTTYPE V V ICES CE(sat) CSTGW30NB60H 600 V < ..
STGW30NB60HD ,N-CHANNEL 30ASTGW30NB60HD®N-CHANNEL 30A - 600V TO-247PowerMESH™ IGBTTYPE V V ICES CE(sat) CSTGW30NB60HD 600 V ..
STGW30NC120HD ,1200V, 30AElectrical characteristics(T =25°C unless otherwise specified)CASETable 4. StaticSymbol Parameter T ..
STGW30NC60VD ,40 A, 600 V, very fast IGBT with Ultrafast diodeElectrical characteristicsT = 25 °C unless otherwise specified.J Table 4. StaticSymbol Parameter Te ..
STGW30NC60W ,30 AAbsolute maximum ratingsSymbol Parameter Value UnitV Collector-emitter voltage (V = 0)600 VCES GE(1 ..
STGW35NB60SD ,Low Drop "S" seriesElectrical characteristics STGW35NB60SDTable 5. Switching on/off (inductive load) Symbol Parameter ..
SUT460M , Epitaxial planar NPN silicon transistor
SUT480H , Epitaxial planar type NPN Silicon Transistor
SUT483J , NPN/PNP Epitaxial Planar Silicon Transistor
SUT488J , Epitaxial Planar Type PNP Silicon Transistor
SUT497H , NPN/PNP Epitaxial Planar Silicon Transistor
SUT509EF , NPN/PNP Epitaxial Planar Silicon Transistor


STGW30NB60H
N-CHANNEL 30A
STGW30NB60H
N-CHANNEL 30A - 600V TO-247
PowerMESH IGBT HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (VCESAT) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION OFF LOSSES INCLUDE TAIL CURRENT
DESCRIPTION

Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH IGBTs, with outstanding
perfomances. The suffix "H" identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).
APPLICATIONS
HIGH FREQUENCY MOTOR CONTROLS WELDING EQUIPMENTS SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
June 1999
ABSOLUTE MAXIMUM RATINGS

(•) Pulse width limited by safe operating area
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THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tj = 25
o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
SWITCHING ON
STGW30NB60H

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING OFF
(•) Pulse width limited by max. junction temperature
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)
Thermal Impedance
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Output Characteristics
Transconductance
Collector-Emitter On Voltage vs Collector Current
Transfer Characteristics
Collector-Emitter On Voltage vs Temperature
Gate Threshold vs Temperature
STGW30NB60H

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Normalized Breakdown Voltage vs Temperature
Gate Charge vs Gate-Emitter Voltage
Total Switching Losses vs Temperature
Capacitance Variations
Total Switching Losses vs Gate Resistance
Total Switching Losses vs Collector Current
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Switching Off Safe Operating Area
Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching
Fig. 3 Switching Waveforms
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