STGW20NC60V ,N-CHANNEL 30AELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: OffSymbol Parameter Tes ..
STGW20NC60VD ,N-CHANNEL 30AELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: OffSymbol Parameter Tes ..
STGW30N120KD ,30 A, 1200 V short circuit rugged IGBT with Ultrafast diodeAbsolute maximum ratingsSymbol Parameter Value UnitV Collector-emitter voltage (V = 0) 1200 VCES GE ..
STGW30NB60H ,N-CHANNEL 30ASTGW30NB60H®N-CHANNEL 30A - 600V TO-247PowerMESH™ IGBTTYPE V V ICES CE(sat) CSTGW30NB60H 600 V < ..
STGW30NB60HD ,N-CHANNEL 30ASTGW30NB60HD®N-CHANNEL 30A - 600V TO-247PowerMESH™ IGBTTYPE V V ICES CE(sat) CSTGW30NB60HD 600 V ..
STGW30NC120HD ,1200V, 30AElectrical characteristics(T =25°C unless otherwise specified)CASETable 4. StaticSymbol Parameter T ..
SUT460M , Epitaxial planar NPN silicon transistor
SUT480H , Epitaxial planar type NPN Silicon Transistor
SUT483J , NPN/PNP Epitaxial Planar Silicon Transistor
SUT488J , Epitaxial Planar Type PNP Silicon Transistor
SUT497H , NPN/PNP Epitaxial Planar Silicon Transistor
SUT509EF , NPN/PNP Epitaxial Planar Silicon Transistor
STGW20NC60V
N-CHANNEL 30A
1/11July 2004
STGP20NC60V
STGW20NC60VN-CHANNEL 30A - 600V - TO-220/TO-247
Very Fast PowerMESH™ IGBT
Rev. 4
STGP20NC60V - STGW20NC60V2/11
Table 3: Absolute Maximum ratings(1)Pulse width limited by max. junction temperature.
Table 4: Thermal Data
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: Off
Table 6: On(#) Calculated according to the iterative formula:CTC() JMAXTC–THJC– V CESAT MAX()TCIC,()×--------------- -----------------------------------------------------------------------------------=
3/11
STGP20NC60V - STGW20NC60V
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Table 8: Switching On 2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode,
the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C)
Table 9: Switching Off(3)Turn-off losses include also the tail of the collector current.
STGP20NC60V - STGW20NC60V4/11
Figure 3: Output Characteristics
Figure 4: Transconductance
Figure 5: Collector-Emitter On Voltage vs Col-
lector Current
Figure 6: Transfer Characteristics
Figure 7: Collector-Emitter On Voltage vs Tem-
perature
Figure 8: Normalized Gate Threshold vs Tem-
perature
5/11
STGP20NC60V - STGW20NC60V
Figure 9: Normalized Breakdown Voltage vs
Temperature
Figure 10: Capacitance Variations
Figure 11: Total Switching Losses vs Gate Re-
sistance
Figure 12: Gate Charge vs Gate-Emitter Volt-
age
ature
Figure 14: Total Switching Losses vs Collector
Current
STGP20NC60V - STGW20NC60V6/11
Figure 15: Thermal Impedance
Figure 16: Turn-Off SOA
Figure 17: Ic vs FrequencyFor a fast IGBT suitable for high frequency appli-
cations, the typical collector current vs. maximum
operating frequency curve is reported. That fre-
quency is defined as follows:
fMAX = (PD - PC) / (EON + EOFF)
1) The maximum power dissipation is limited by
maximum junction to case thermal resistance:
PD = ΔT / RTHJ-C
considering ΔT = TJ - TC = 125 °C- 75 °C = 50°C
2) The conduction losses are:
PC = IC * VCE(SAT) * δ
with 50% of duty cycle, VCESAT typical value
@125°C.
3) Power dissipation during ON & OFF commuta-
tions is due to the switching frequency:
PSW = (EON + EOFF) * freq.
4) Typical values @ 125°C for switching losses are
used (test conditions: VCE = 390V, VGE = 15V,
RG = 3.3 Ohm). Furthermore, diode recovery en-
ergy is included in the EON (see note 2), while the
tail of the collector current is included in the EOFF
measurements (see note 3).
