STGP7NC60H ,N-CHANNEL 7AELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: Main ParametersSymbol P ..
STGP7NC60HD ,N-CHANNEL 7AELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: Main ParametersSymbol P ..
STGP8NC60KD ,New short circuit rugged "K" seriesAbsolute maximum ratingsValueSymbol Parameter UnitD²PAKDPAK TO-220FPTO-220V Collector-emitter volta ..
STGW20NB60HD ,N-CHANNEL 20ASTGW20NB60HD®N-CHANNEL 20A - 600V TO-247PowerMESH™ IGBTTYPE V V ICES CE(sat) CSTGW20NB60HD 600 V ..
STGW20NC60V ,N-CHANNEL 30AELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: OffSymbol Parameter Tes ..
STGW20NC60VD ,N-CHANNEL 30AELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: OffSymbol Parameter Tes ..
SUT460M , Epitaxial planar NPN silicon transistor
SUT480H , Epitaxial planar type NPN Silicon Transistor
SUT483J , NPN/PNP Epitaxial Planar Silicon Transistor
SUT488J , Epitaxial Planar Type PNP Silicon Transistor
SUT497H , NPN/PNP Epitaxial Planar Silicon Transistor
SUT509EF , NPN/PNP Epitaxial Planar Silicon Transistor
STGP7NC60H
N-CHANNEL 7A
1/12September 2004
STGP7NC60H - STGD7NC60HN-CHANNEL 7A - 600V TO-220/DPAK
Very Fast PowerMESH™ IGBT
Rev. 1
STGP7NC60H - STGD7NC60H2/12
Table 3: Absolute Maximum ratings ) Pulse width limited by max. junction temperature.
Table 4: Thermal Data
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: Main Parameters(#) Calculated according to the iterative formula:CTC() JMAXTC–THJC– V CESAT MAX()TCIC,()×--------------- -----------------------------------------------------------------------------------=
3/12
STGP7NC60H - STGD7NC60H
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic(1) Pulsed: Pulse duration= 300 µs, duty cycle 1.5%
Table 7: Switching On
Table 8: Switching Off
Table 9: Switching Energy2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode,
the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C)
(3)Turn-off losses include also the tail of the collector current.
STGP7NC60H - STGD7NC60H4/12
Figure 3: Output Characteristics
Figure 4: Transconductance
Figure 5: Collector-Emitter On Voltage vs Col-
lector Current
Figure 6: Transfer Characteristics
Figure 7: Collector-Emitter On Voltage vs Tem-
perature
Figure 8: Normalized Gate Threshold vs Tem-
perature
5/12
STGP7NC60H - STGD7NC60H
Figure 9: Normalized Breakdown Voltage vs
Temperature
Figure 10: Capacitance Variations
Figure 11: Total Switching Losses vs Gate Re-
sistance
Figure 12: Gate Charge vs Gate-Emitter Volt-
age
ature
Figure 14: Total Switching Losses vs Collector
Current
STGP7NC60H - STGD7NC60H6/12
Figure 15: Thermal Impedance for TO-220
Figure 17: Turn-Off SOA
Figure 18: Ic vs Frequency4) Typical values @ 125°C for switching losses are
used (test conditions: VCE = 390V, VGE = 15V,
RG = 3.3 Ohm). Furthermore, diode recovery en-
ergy is included in the EON (see note 2), while the
tail of the collector current is included in the EOFF
measurements (see note 3).
