STGP7NB60HDFP ,N-CHANNEL 7ASTGP7NB60HDSTGP7NB60HDFP®N-CHANNEL 7A - 600V TO-220/FPPowerMESH™ IGBTTYPE V V ICES CE(sat) CSTGP7 ..
STGP7NC60H ,N-CHANNEL 7AELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: Main ParametersSymbol P ..
STGP7NC60HD ,N-CHANNEL 7AELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: Main ParametersSymbol P ..
STGP8NC60KD ,New short circuit rugged "K" seriesAbsolute maximum ratingsValueSymbol Parameter UnitD²PAKDPAK TO-220FPTO-220V Collector-emitter volta ..
STGW20NB60HD ,N-CHANNEL 20ASTGW20NB60HD®N-CHANNEL 20A - 600V TO-247PowerMESH™ IGBTTYPE V V ICES CE(sat) CSTGW20NB60HD 600 V ..
STGW20NC60V ,N-CHANNEL 30AELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: OffSymbol Parameter Tes ..
SUT460M , Epitaxial planar NPN silicon transistor
SUT480H , Epitaxial planar type NPN Silicon Transistor
SUT483J , NPN/PNP Epitaxial Planar Silicon Transistor
SUT488J , Epitaxial Planar Type PNP Silicon Transistor
SUT497H , NPN/PNP Epitaxial Planar Silicon Transistor
SUT509EF , NPN/PNP Epitaxial Planar Silicon Transistor
STGP7NB60HDFP
N-CHANNEL 7A
STGP7NB60HD
STGP7NB60HDFPN-CHANNEL 7A - 600V TO-220/FP
PowerMESH IGBT HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION OFF LOSSES INCLUDE TAIL CURRENT CO-PACKAGED WITH TURBOSWITCH
ANTIPARALLEL DIODE
DESCRIPTION Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH IGBTs, with outstanding
perfomances. The suffix "H" identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).
APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
June 1999
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area
1/9
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tj = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
SWITCHING ON
STGP7NB60HD/FP2/9
ELECTRICAL CHARACTERISTICS (continued)SWITCHING OFF
COLLECTOR-EMITTER DIODE(•) Pulse width limited by max. junction temperature
(�) Include recovery lossess on the STTA506 freewheeling diode
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)
Thermal Impedeance For TO-220 Thermal Impedeance For TO-220FP
STGP7NB60HD/FP3/9
Output Characteristics
Transconductance
Collector-Emitter On Voltage vs Collector Current
Transfer Characteristics
Collector-Emitter On Voltage vs Temperature
Gate Threshold vs Temperature
STGP7NB60HD/FP4/9
Normalized Breakdown Voltage vs Temperature
Gate Charge vs Gate-Emitter Voltage
Total Switching Losses vs Temperature
Capacitance Variations
Total Switching Losses vs Gate Resistance
Total Switching Losses vs Collector Current
STGP7NB60HD/FP5/9
Switching Off Safe Operating Area Diode Forward Voltage
Fig. 1: Gate Charge test Circuit
Fig. 3: Switching Waveforms
Fig. 2: Test Circuit For Inductive Load Switching
STGP7NB60HD/FP6/9
