STGF20NB60S ,N-CHANNEL 13AELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: On/Off Symbol Parameter ..
STGF7NC60HD ,N-CHANNEL 7AAbsolute Maximum ratingsSymbol Parameter Value UnitSTGP7NC60HDSTGF7NC60HDSTGB7NC60HDV Collector-Emi ..
STGF8NC60KD ,New short circuit rugged "K" seriesElectrical characteristics(T =25°C unless otherwise specified)CASETable 4. StaticSymbol Parameter T ..
STGP10NB60SFP ,N-CHANNEL 10A 600V TO-220/TP-220FP/DPAK PowerMESH"IGBTAbsolute Maximum ratingsSymbol Parameter Value UnitTO-220/D²PAK TO-220FPV Collector-Emitter Voltage ..
STGP10NC60KD ,10 A, 600 V short-circuit rugged IGBTApplicationsFigure 1. Internal schematic diagram■ High frequency motor controls■ SMPS and PFC in bo ..
STGP12NB60H ,N-CHANNEL 12AELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
SUR542EF , Epitaxial Planar Type NPN Silicon Transistor
SUR543EF , Epitaxial Planar Type NPN Silicon Transistor
SUR551J , Epitaxial Planar Type PNP Silicon Transistor
SUR552J , Epitaxial planar NPN/PNP silicon transistor
SUR560J , Epitaxial planar PNP silicon transistor
SUR561J , Epitaxial planar NPN silicon transistor
STGF20NB60S
N-CHANNEL 13A
1/10February 2005
STGF20NB60SN-CHANNEL 13A - 600V TO-220FP
PowerMESH™ IGBT
Rev. 2
STGF20NB60S2/10
Table 3: Absolute Maximum ratings ) Pulse width limited by safe operating area
Table 4: Thermal Data
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: On/Off (#) Calculated according to the iterative formula: CTC() JMAXTC–THJC– V CESAT MAX()TCIC,()× --------------------------------------------------------------------------------------------------=
3/10
STGF20NB60S
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic(1) Pulsed: Pulse duration= 300 µs, duty cycle 1.5%
Table 7: Switching On
Table 8: Switching Off
Table 9: Switching Energy(2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack
diode, the co-pack diode is used as external diode.
(3) Turn-off losses include also the tail of the collector current.
STGF20NB60S4/10
Figure 3: Output Characteristics
Figure 4: Transconductance
Figure 5: Collector-Emitter On Voltage vs Col-
lector Current
Figure 6: Transfer Characteristics
Figure 7: Normalized Collector-Emitter On
Voltage vs Temperature
Figure 8: Gate Threshold vs Temperature
5/10
STGF20NB60S
Figure 9: Normalized Breakdown Voltage vs
Temperature
Figure 10: Capacitance Variations
Figure 11: Switching Losses vs Temperature
Figure 12: Gate Charge vs Gate-Emitter Volt-
age
Figure 14: Switching Losses vs Collector Cur-
rent
STGF20NB60S6/10
Figure 15: Thermal Impedance Figure 16: Collector-Emitter Diode Character-
istics
