STGP10NC60KD ,10 A, 600 V short-circuit rugged IGBTApplicationsFigure 1. Internal schematic diagram■ High frequency motor controls■ SMPS and PFC in bo ..
STGP12NB60H ,N-CHANNEL 12AELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STGP12NB60KD ,N-CHANNEL 18AELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STGP14NC60KD ,14 A, 600 V short-circuit rugged IGBTElectrical characteristics(T =25 °C unless otherwise specified)j Table 4. StaticSymbol Parameter Te ..
STGP19NC60HD ,19 A, 600 V, very fast IGBT with Ultrafast diodeApplicationsD²PAKTO-220■ High frequency motor drives■ SMPS and PFC in both hard switch and resonant ..
STGP19NC60KD ,short circuit rugged IGBTElectrical characteristics(T = 25 °C unless otherwise specified)CASE Table 4. StaticSymbol Paramete ..
SUR566EF , Epitaxial Planar Type NPN Silicon Transistor
SUT460M , Epitaxial planar NPN silicon transistor
SUT480H , Epitaxial planar type NPN Silicon Transistor
SUT483J , NPN/PNP Epitaxial Planar Silicon Transistor
SUT488J , Epitaxial Planar Type PNP Silicon Transistor
SUT497H , NPN/PNP Epitaxial Planar Silicon Transistor
STGD10NC60KDT4-STGF10NC60KD-STGP10NC60KD
10 A, 600 V short-circuit rugged IGBT
November 2009 Doc ID 11423 Rev 6 1/20
STGB10NC60KD, STGD10NC60KD
STGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBT
Features Lower on voltage drop (VCE(sat)) Lower CRES / CIES ratio (no cross-conduction
susceptibility) Very soft ultra fast recovery antiparallel diode Short-circuit withstand time 10µs
DescriptionThis IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
Applications High frequency motor controls SMPS and PFC in both hard switch and
resonant topologies Motor drives
Figure 1. Internal schematic diagram
Table 1. Device summary
Contents STGx10NC60KD2/20 Doc ID 11423 Rev 6
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
STGx10NC60KD Electrical ratings
Doc ID 11423 Rev 6 3/20
1 Electrical ratings
Table 2. Absolute maximum ratings Calculated according to the iterative formula Vclamp = 80 % VCES, VGE = 15 V, RG = 10 Ω, TJ = 150 °C Pulse width limited by maximum junction temperature and turn-off within RBSOACTC() T jmax()TC–thjc– VCEsat() max()T jmax()ICTC(), ()×----------------------- ---------------------------------- ----------------- --------------------------------=
Electrical ratings STGx10NC60KD
4/20 Doc ID 11423 Rev 6
Table 3. Thermal data
STGx10NC60KD Electrical characteristics
Doc ID 11423 Rev 6 5/20
2 Electrical characteristics
(Tj =25°C unless otherwise specified)
Table 4. Static Pulse test: pulse duration < 300 µs, duty cycle < 2 %
Table 5. Dynamic
Electrical characteristics STGx10NC60KD
6/20 Doc ID 11423 Rev 6
Table 6. Switching on/off (inductive load)
Table 7. Switching energy (inductive load) Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in
a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C) Turn-off losses include also the tail of the collector current
STGx10NC60KD Electrical characteristics
Doc ID 11423 Rev 6 7/20
Table 8. Collector-emitter diode
Electrical characteristics STGx10NC60KD
8/20 Doc ID 11423 Rev 6
2.1 Electrical characteristics (curves)
Figure 2. Output characteristics Figure 3. Transfer characteristics
temperature
Figure 6. Gate charge vs gate-source voltage Figure 7. Capacitance variations
STGx10NC60KD Electrical characteristics
Doc ID 11423 Rev 6 9/20
Figure 8. Normalized gate threshold voltage
vs temperature
Figure 9. Collector-emitter on voltage vs
collector current
Figure 10. Normalized breakdown voltage vs
temperature
Figure 11. Switching losses vs temperature
Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector
current
Electrical characteristics STGx10NC60KD
10/20 Doc ID 11423 Rev 6
Figure 14. Thermal impedance for D²PAK,
DPAK and TO-220
Figure 15. Turn-off SOA
Figure 16. Emitter-collector diode
characteristics
Figure 17. Thermal impedance for TO-220FP
