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Partno	Mfg	Dc	Qty	Available	Descript
STGB7NB40LZT4	ST	N/a	1240	avai	N-CHANNEL CLAMPED 14A D2PAK INTERNALLY CLAMPED POWERMESH IGBT
STGB7NB40LZT4	STM	N/a	10000	avai	N-CHANNEL CLAMPED 14A D2PAK INTERNALLY CLAMPED POWERMESH IGBT
STGB7NB40LZT4	ST,ST	N/a	10000	avai	N-CHANNEL CLAMPED 14A D2PAK INTERNALLY CLAMPED POWERMESH IGBT

STGB7NB40LZT4 ,N-CHANNEL CLAMPED 14A D2PAK INTERNALLY CLAMPED POWERMESH IGBTABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Collector-Emitter Voltage (V =0) CLAMPED VCES ..
STGB7NB40LZT4 ,N-CHANNEL CLAMPED 14A D2PAK INTERNALLY CLAMPED POWERMESH IGBTSTGB7NB40LZ2N-CHANNEL CLAMPED 14A - D PAKINTERNALLY CLAMPED PowerMESH™ IGBTTYPE V V ICES CE(sat) CS ..
STGB7NB40LZT4 ,N-CHANNEL CLAMPED 14A D2PAK INTERNALLY CLAMPED POWERMESH IGBTAPPLICATIONS■ AUTOMOTIVE IGNITION
STGB7NB60FD ,N-CHANNEL 7A 600V TO-220/D2PAK POWERMESH IGBTSTGP7NB60FD - STGB7NB60FD2N-CHANNEL 7A - 600V TO-220 / D PAKPowerMESH™ IGBTTYPE V V ICES CE(sat) (M ..
STGB7NB60HD ,N-CHANNEL 7ASTGB7NB60HD®N-CHANNEL 7A - 600V DPAK PowerMESH™ IGBTTYPE V V ICES CE(sat) CSTGB7NB60HD 600 V < 2. ..
STGB7NC60HD ,N-CHANNEL 7AAPPLICATIONS

STGB7NB40LZT4
N-CHANNEL CLAMPED 14A D2PAK INTERNALLY CLAMPED POWERMESH IGBT
1/8March 2003
STGB7NB40LZ
N-CHANNEL CLAMPED 14A- D2 PAK
INTERNALLY CLAMPED PowerMESH™ IGBT POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP LOW GATE CHARGE HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE
DESCRIPTION
Using the latest high voltage technology basedona
patented strip layout, STMicroelectronics has
designedan advanced familyof IGBTs, the
PowerMESH™ IGBTs, with outstanding
performances. The builtin collector-gate zener
exhibitsa very precise active clamping while the
gate-emitter zener suppliesan ESD protection.
APPLICATIONS AUTOMOTIVE IGNITION
ABSOLUTE MAXIMUM RATINGS
STGB7NB40LZ
2/8
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE= 25°C UNLESS OTHERWISE SPECIFIED)
OFF (1)
DYNAMIC
SWITCHING ON
3/8
Normalized Gate Threshold Voltagevs Temp. Transconductance
Transfer Characteristics
Output Characteristics
STGB7NB40LZ
4/8
Capacitance
Normalized Collector-Emitter On Voltage vs
Temperature
Normalized Break-down Voltagevs Temp. Clamping Voltagevs Gate Resistance
Gate-Charge
Collector-Emitter On Voltage vs Gate-Emitter
Voltage
5/8
STGB7NB40LZ
Fig.4: Gate Charge test CircuitFig.3: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig.2: Unclamped Inductive WaveformFig.1: Unclamped Inductive Load Test Circuit
STGB7NB40LZ
6/8

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