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STGB7NB40LZT4 ,N-CHANNEL CLAMPED 14A D2PAK INTERNALLY CLAMPED POWERMESH IGBTAPPLICATIONS■ AUTOMOTIVE IGNITION
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STGB10NB40LZT4
N-CHANNEL CLAMPED 20A D2PAK INTERNALLY CLAMPED POWERMESH IGBT
1/10August 2003
STGB10NB40LZN-CHANNEL CLAMPED 20A- D²PAK
INTERNALLY CLAMPED PowerMESH™ IGBT POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP LOW GATE CHARGE HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE
DESCRIPTIONUsing the latest high voltage technology basedona
patented strip layout, STMicroelectronics has
designedan advanced familyof IGBTs, the
PowerMESH™ IGBTs, with outstanding
performances. The builtin collector-gate zener
exhibitsa very precise active clamping while the
gate-emitter zener suppliesan ESD protection.
APPLICATIONS AUTOMOTIVE IGNITION
ORDERING INFORMATION
STGB10NB40LZ2/10
ABSOLUTE MAXIMUM RATINGS )Pulse width limitedby safe operating area
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE=25°C UNLESS OTHERWISE SPECIFIED)
OFF (1)
3/10
STGB10NB40LZ
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
FUNCTIONAL CHARACTERISTICS
SWITCHING ON
SWITCHING OFF
(1)Pulse width limitedby max. junction temperature.
(**)Losses Include Alsothe Tail
STGB10NB40LZ4/10
Collector-Emitter On Voltagevs Collector CurrentCollector-Emitter On Voltagevs Temperature
Normalized Collector-Emitter On Voltagevs Temp.Transconductance
Transfer CharacteristicsOutput Characteristics
5/10
STGB10NB40LZ
Normalized Clamping Voltagevs Temperature
Total Switching Lossesvs TemperatureTotal Switching Lossesvs Gate Resistance
Gate Chargevs Gate-Emitter VoltageCapacitance Variations
Gate Thresholdvs Temperature
STGB10NB40LZ6/10
Thermal Impedance
Turn-Off SOA
Total Switching Lossesvs Collector Current
