STFW3N150 ,N-channel 1500 V, 6 Ohm typ., 2.5 A PowerMESH(TM) power MOSFET in TO-3PF packageAbsolute maximum ratingsValue2Symbol Parameter H PAK-2, UnitTO-3PF TO-220, TO-247V Drain-source ..
STG3157CTR ,LOW VOLTAGE LOW ON RESISTANCE SPDT SWITCH WITH BREAK BEFORE MAKE FEATURESTG3157LOW VOLTAGE LOW ON RESISTANCE SPDT SWITCHWITH BREAK BEFORE MAKE FEATURE■ HIGH SPEED:t = 0.3n ..
STG3220QTR ,Low Voltage High Bandwidth Dual SPDT Switchapplications. ■ Integrated fail safe functionThe SEL input is provided to control the switch. ■ Int ..
STG3680QTR ,LOW VOLTAGE 5OHM MAX DUAL SPDT SWITCH WITH BREAK BEFORE MAKE FEATUREAbsolute Maximum Ratings are those values beyond which damage to the device may occur. Functional o ..
STG3682QTR ,Low Voltage High Bandwidth Dual SPDT Switchfeatures are fast switching speed, Break Before Make Delay Time and Ultra Low Power Consumption. Al ..
STG3682QTR ,Low Voltage High Bandwidth Dual SPDT SwitchFeatures■ Ultra low power dissipation:–I = 0.2µA (Max.) at T = 85°CCC A■ Low “ON” resistance:–R = 4 ..
SUP70N06-14 ,N-Channel Enhancement-Mode Trans FaxBack 408-970-5600S-57253—Rev. C, 24-Feb-982-1SUP/SUB70N06-14Vishay Siliconix
STFW3N150-STW3N150
N-channel 1500 V, 6 Ohm typ., 2.5 A PowerMESH(TM) power MOSFET in TO-3PF package
February 2014 DocID13102 Rev 11 1/23
STFW3N150, STH3N150-2,
STP3N150, STW3N150N-channel 1500 V , 2.5 A, 6 Ω typ., PowerMESH™ Power MOSFETs
in TO-3PF , H2 PAK-2, TO-220 and TO247 packages
Datasheet - production data
Figure 1. Internal schematic diagram
Features 100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package,
creepage distance path is 5.4 mm (typ.)
Applications Switching applications
DescriptionThese Power MOSFETs are designed using the
company’s consolidated strip layout-based MESH
OVERLAY™ process. The result is a product that
matches or improves on the performance of
comparable standard parts from other
manufacturers.
Table 1. Device summary
Contents STFW3N150, STH3N150-2, STP3N150, STW3N1502/23 DocID13102 Rev 11
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
DocID13102 Rev 11 3/23
STFW3N150, STH3N150-2, STP3N150, STW3N150 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings Pulse width limited by safe operating area
Table 3. Thermal data When mounted on 1 inch2 FR-4 board, 2 oz Cu
Table 4. Avalanche characteristics
Electrical characteristics STFW3N150, STH3N150-2, STP3N150, STW3N150
4/23 DocID13102 Rev 11
2 Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5. On /off states
Table 6. Dynamic Pulsed: pulse duration = 300 μs, duty cycle 1.5% Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
DocID13102 Rev 11 5/23
STFW3N150, STH3N150-2, STP3N150, STW3N150 Electrical characteristics
Table 7. Switching times
Table 8. Source drain diode Pulse width limited by safe operating area Pulsed: pulse duration = 300 μs, duty cycle 1.5%
