STF8NK85Z ,N-CHANNEL 850V -1.1OhmAbsolute Maximum ratingsSymbol Parameter Value UnitTO-220 TO-220FPV Drain-source Voltage (V = 0)850 ..
STF8NM60N , N-channel 600 V - 0.56 Ω - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh™ Power MOSFET
STF9NK90Z ,N-CHANNEL 900V 1.1 OHM 8A TO-220 TO-220FP TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFETSTP9NK90Z - STF9NK90ZSTW9NK90ZN-CHANNEL 900V - 1.1Ω - 8A TO-220/TO-220FP/TO-247Zener-Protected Supe ..
STFPC320 , Front panel controller/driver with standby power management and real-time clock
STFW3N150 ,N-channel 1500 V, 6 Ohm typ., 2.5 A PowerMESH(TM) power MOSFET in TO-3PF packageAbsolute maximum ratingsValue2Symbol Parameter H PAK-2, UnitTO-3PF TO-220, TO-247V Drain-source ..
STG3157CTR ,LOW VOLTAGE LOW ON RESISTANCE SPDT SWITCH WITH BREAK BEFORE MAKE FEATURESTG3157LOW VOLTAGE LOW ON RESISTANCE SPDT SWITCHWITH BREAK BEFORE MAKE FEATURE■ HIGH SPEED:t = 0.3n ..
SUP57N20-33 ,N-Channel 200-V (D-S) 175C MOSFETS-22449—Rev. A, 20-Jan-03 1SUP57N20-33New ProductVishay SiliconixSPECIFICATIONS (T =25C UNLESS OTH ..
SUP60N06-18 ,N-Channel Enhancement-Mode TransSUP/SUB60N06-18Vishay SiliconixN-Channel 60-V (D-S), 175C MOSFET
STF8NK85Z
N-CHANNEL 850V -1.1Ohm
1/8
TARGET SPECIFICATIONMarch 2005
STP8NK85Z
STF8NK85ZN-CHANNEL 850V -1.1Ω - 8.6A TO-220/TO-220FP
Zener-Protected SuperMESH™MOSFET
Rev. 2
STP8NK85Z - STF8NK85Z2/8
Table 3: Absolute Maximum ratings ) Pulse width limited by safe operating area
(1) ISD ≤6.7A, di/dt ≤200A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
Table 5: Avalanche Characteristics
Table 6: Gate-Source Zener Diode
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
3/8
STP8NK85Z - STF8NK85Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On/Off
Table 8: DYNAMIC
Table 9: Source Drain DiodeNote:1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. Pulse width limited by safe operating area. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
STP8NK85Z - STF8NK85Z4/8
Figure 3: Unclamped Inductive Load Test Cir-
cuit
Figure 5: Test Circuit For Inductive Load
Switching and Diode Recovery Times
Figure 6: Unclamped Inductive Wafeform
Figure 7: Gate Charge Test Circuit
STP8NK85Z - STF8NK85Z6/8
