STF6NK70Z ,N-CHANNEL 700VFeatures Figure 1: PackageTYPE V R I PwDSS DS(on) DSTP6NK70Z 700 V < 1.8 Ω 5 A 110 WSTF6NK70Z 700 V ..
STF6NK70Z ,N-CHANNEL 700VAbsolute Maximum ratingsSymbol Parameter Value UnitSTP6NK70Z STF6NK70ZV Drain-source Voltage (V = 0 ..
STF6NM60N , N-channel 600V - 0.85Ω - 4.6A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET
STF7NK30Z ,N-CHANNEL 300V 0.80 OHM 5A TO-220 TO-220FP ZENER-PROTECTED SUPERMESH™ POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP7NK30Z STF7NK30ZV Drain-source Voltage (V =0) ..
STF7NM60N ,N-channel 600 V, 5 A, 0.84 Ohm MDmesh(TM) II Power MOSFET in TO-220FP packageAbsolute maximum ratingsValueSymbol Parameter UnitTO-220, IPAK, TO-220FPDPAKV Drain-source voltage ..
STF7NM80 ,N-channel 800 V, 0.95 Ohm, 6.5 A MDmesh(TM) Power MOSFET in TO-220FP packageAbsolute maximum ratingsValueSymbol Parameter UnitTO-220, IPAKTO-220FPDPAKV Drain-source voltage (V ..
SUP15P01-52 ,P-Channel 8-V (D-S) 175C MOSFETS-20966—Rev. C, 01-Jul-02 3C – Capacitance (pF) g – Transconductance (S) I – Drain Current (A)f ..
SUP18N15-95 ,N-Channel 150-V (D-S) 175C MOSFETS-04093—Rev. A, 25-Jun-011SUP18N15-95New ProductVishay Siliconix ..
SUP40N10-30 ,N-Channel 100-V (D-S) 175C MOSFETS-03537—Rev. A, 24-Mar-03 3C - Capacitance (pF) g - Transconductance (S) I - Drain Current (A)fs ..
SUP40N10-30-E3 , N-Channel 100-V (D-S) 175 °C MOSFET
SUP40N25-60 , N-Channel 250-V (D-S) 175 Celsius MOSFET
SUP45N03-13L ,N-Channel Enhancement-Mode TransistorS-05011—Rev. F, 29-Oct-013C – Capacitance (pF) g – Transconductance (S)fs I – Drain Current (A)D ..
STF6NK70Z
N-CHANNEL 700V
1/11November 2004
STP6NK70Z
STF6NK70ZN-CHANNEL 700V - 1.5Ω - 5A TO-220/TO-220FP
Zener-Protected SuperMESH™MOSFET
Rev. 2
STP6NK70Z - STF6NK70Z2/11
Table 3: Absolute Maximum ratings ) Pulse width limited by safe operating area
(1) ISD ≤5A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
Table 5: Avalanche Characteristics
Table 6: Gate-Source Zener Diode
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
3/11
STP6NK70Z - STF6NK70Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On /Off
Table 8: Dynamic
Table 9: Source Drain Diode (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
STP6NK70Z - STF6NK70Z4/11
Figure 3: Safe Operating Area
Figure 4: Safe Operating Area for TO-220FP
Figure 5: Output Characteristics
Figure 6: Thermal Impedance
Figure 7: Thermal Impedance for TO-220FP
Figure 8: Transfer Characteristics
5/11
STP6NK70Z - STF6NK70Z
Figure 9: Transconductance
Figure 10: Gate Charge vs Gate-source Voltage
Figure 11: Source-Drain Diode Forward Char-
acteristics
Figure 12: Static Drain-source On Resistance
Figure 13: Capacitance Variations
Figure 14: Normalizzed BVdss vs Temperature
STP6NK70Z - STF6NK70Z6/11
Figure 15: Avalanche Energy vs Starting Tj
