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Partno	Mfg	Dc	Qty	Available	Descript
STF5N52U	ST	N/a	35441	avai	N-channel 525 V, 1.28 Ohm, 4.4 A, TO-220FP UltraFASTmesh(TM) Power MOSFET

STF5N52U ,N-channel 525 V, 1.28 Ohm, 4.4 A, TO-220FP UltraFASTmesh(TM) Power MOSFETElectrical characteristics(Tcase =25 °C unless otherwise specified).Table 4. On /off statesSymbol P ..
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STF5N52U
N-channel 525 V, 1.28 Ohm, 4.4 A, DPAK UltraFASTmesh(TM) Power MOSFET
April 2014 DocID15684 Rev 3 1/19
STD5N52U,
STF5N52U
N-channel 525 V , 1.25 Ω typ., 4.4 A UltraFASTmesh™
Power MOSFET s in DPAK and TO-220FP packages
Datasheet - production data
Figure 1. Internal schematic diagram
Features Outstanding dv/dt capability Gate charge minimized Very low intrinsic capacitances Very low RDS(on) Extremely low trr
Applications Switching applications
Description
These devices are N-channel Power MOSFETs
developed using UltraFASTmesh™ technology,
which combines the advantages of reduced on-
resistance, Zener gate protection and very high
dv/dt capability with an enhanced fast body-drain
recovery diode.
Table 1. Device summary
Contents STD5N52U, STF5N52U
2/19 DocID15684 Rev 3
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1 DPAK, STD5N52U . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.2 TO-220FP , STF5N52U . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
DocID15684 Rev 3 3/19
STD5N52U, STF5N52U Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings Pulse width limited by safe operating area. ISD ≤ 4.4 A, di/dt ≤ 400 A/μs, peak VDS ≤ V(BR)DSS
Table 3. Thermal data When mounted on 1 inch² FR-4 board, 2oz Cu
Electrical characteristics STD5N52U, STF5N52U
4/19 DocID15684 Rev 3
2 Electrical characteristics
(Tcase =25 °C unless otherwise specified).
Table 4. On /off states
Table 5. Dynamic Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
DocID15684 Rev 3 5/19
STD5N52U, STF5N52U Electrical characteristics
The built-in back-to-back Zener diodes have specifically been designed to enhance the
device's ESD capability. In this respect the Zener voltage is appropriate to achieve an
efficient and cost-effective intervention to protect the device's integrity. These integrated
Zener diodes thus avoid the usage of external components.
Table 6. Switching times
Table 7. Source drain diode Pulse width limited by safe operating area Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Table 8. Gate-source Zener diode