STF3HNK90Z ,N-CHANNEL 900VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP3HNK90Z STF3HNK90ZV Drain-source Voltage (V = ..
STF3N62K3 ,N-channel 620 V, 2.2 Ohm typ., 2.7 A SuperMESH3(TM) Power MOSFET in TO-220FP packageAbsolute maximum ratingsValueSymbol Parameter UnitTO-220 DPAKTO-220FPD²PAK IPAKV Drain-source volta ..
STF3NK100Z ,N-channel 1000VAbsolute maximum ratingsValueSymbol Parameter UnitTO-220/DPAK TO-220FPV Drain-source voltage (V = 0 ..
STF3NK80Z ,N-CHANNEL 800VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTD3NK80ZSTP3NK80Z STF3NK80ZSTD3NK80Z-1V Drain-s ..
STF40NF20 ,N-channel 200VElectrical characteristics (curves) . . . . 63 Test circuit 94 Package mechanica ..
STF4A60 , Bi-Directional Triode Thyristor
SUP15P01-52 ,P-Channel 8-V (D-S) 175C MOSFETS-20966—Rev. C, 01-Jul-02 3C – Capacitance (pF) g – Transconductance (S) I – Drain Current (A)f ..
SUP18N15-95 ,N-Channel 150-V (D-S) 175C MOSFETS-04093—Rev. A, 25-Jun-011SUP18N15-95New ProductVishay Siliconix ..
SUP40N10-30 ,N-Channel 100-V (D-S) 175C MOSFETS-03537—Rev. A, 24-Mar-03 3C - Capacitance (pF) g - Transconductance (S) I - Drain Current (A)fs ..
SUP40N10-30-E3 , N-Channel 100-V (D-S) 175 °C MOSFET
SUP40N25-60 , N-Channel 250-V (D-S) 175 Celsius MOSFET
SUP45N03-13L ,N-Channel Enhancement-Mode TransistorS-05011—Rev. F, 29-Oct-013C – Capacitance (pF) g – Transconductance (S)fs I – Drain Current (A)D ..
STF3HNK90Z
N-CHANNEL 900V
1/10August 2003
STP3HNK90Z- STF3HNK90ZN-CHANNEL 900V- 3.5Ω - 3A TO-220- TO-220FP
Zener-Protected SuperMESH™Power MOSFET TYPICAL RDS(on)= 3.5Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTIONThe SuperMESH™ seriesis obtained through an
extreme optimizationof ST’s well established strip-
based PowerMESH™ layout.In additionto pushing
on-resistance significantly down, special careis tak-to ensurea very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full rangeof high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC LIGHTING
ORDERING INFORMATION
STP3HNK90Z- STF3HNK90Z2/10
ABSOLUTE MAXIMUM RATINGS) Pulse width limitedby safe operating area
(1)ISD ≤3A, di/dt ≤200A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX.
(*) Limited onlyby maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionallybe
applied from gateto source.In this respect the Zener voltageis appropriateto achievean efficient and
cost-effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the
usageof external components.
3/10
STP3HNK90Z- STF3HNK90Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
STP3HNK90Z- STF3HNK90Z4/10
Safe Operating Area For TO-220
Output Characteristics
Safe Operating Area For TO-220FP
Transfer Characteristics
5/10
STP3HNK90Z- STF3HNK90Z
Normalized Gate Threshold Voltagevs Temp.
Capacitance Variations
Transconductance
Normalized On Resistancevs Temperature
Static Drain-source On Resistance
Gate Chargevs Gate-source Voltage
STP3HNK90Z- STF3HNK90Z6/10
Normalized BVDSSvs TemperatureSource-drain Diode Forward Characteristics
Maximum Avalanche Energyvs Temperature
