IC Phoenix
 
Home ›  SS102 > STF24NM65N,N-channel 650 V
STF24NM65N Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
STF24NM65NSTN/a338avaiN-channel 650 V


STF24NM65N ,N-channel 650 VAbsolute maximum ratingsValueSymbol Parameter UnitTO-220/I²PAKTO-220FPTO-247/D²PAKV Drain-source vo ..
STF25A60 , Bi-Directional Triode Thyristor
STF25NM50N ,N-CHANNEL 550V @ TjMAXSTP25NM50N - STF25NM50NSTB25NM50N/-1 - STW25NM50NN-CHANNEL 550V @TjMAX - 0.12 Ω - 21.5 A TO-220/FP/ ..
STF25NM60N ,N-CHANNEL 650 @Tjmax-0.140&-20A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFETSTP25NM60N - STF25NM60NSTB25NM60N/-1 - STW25NM60NN-CHANNEL 650 @Tjmax-0.140Ω -20A TO-220/FP/D/² I²P ..
STF25NM60ND ,N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220FP packageAbsolute maximum ratingsValueSymbol Parameter Unit2D PAK, TO-220, TO-220FPTO-247V Drain-source volt ..
STF26NM60N ,N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in TO-220FP packageapplications$% ' 7 DescriptionThese devices are N-channel Power MOSFETs developed using the seco ..
SUM90P10-19L , P-Channel 100-V (D-S) MOSFET
SUM90P10-19L , P-Channel 100-V (D-S) MOSFET
SUP15P01-52 ,P-Channel 8-V (D-S) 175C MOSFETS-20966—Rev. C, 01-Jul-02 3C – Capacitance (pF) g – Transconductance (S) I – Drain Current (A)f ..
SUP18N15-95 ,N-Channel 150-V (D-S) 175C MOSFETS-04093—Rev. A, 25-Jun-011SUP18N15-95New ProductVishay Siliconix        ..
SUP40N10-30 ,N-Channel 100-V (D-S) 175C MOSFETS-03537—Rev. A, 24-Mar-03 3C - Capacitance (pF) g - Transconductance (S) I - Drain Current (A)fs ..
SUP40N10-30-E3 , N-Channel 100-V (D-S) 175 °C MOSFET


STF24NM65N
N-channel 650 V
February 2008 Rev 1 1/19
STW24NM65N-STI24NM65N-STF24NM65N
STB24NM65N - STP24NM65N

N-channel 650 V - 0.16 Ω - 19 A - TO-220 - TO-220FP - D2 PAK2P AK - TO-247 second generation MDmesh™ Power MOSFET
Features
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
Application
Switching applications
Description

This series of devices is designed using the
second generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Figure 1. Internal schematic diagram

Limited only by maximum temperature allowed
Table 1. Device summary
Contents STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N
2/19
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N Electrical ratings
3/19
1 Electrical ratings
Table 2. Absolute maximum ratings
Limited only by maximum temperature allowed Pulse width limited by safe operating area ISD ≤ 19 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS
Table 3. Thermal data
Electrical ratings STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N
4/19
Table 4. Avalanche characteristics
STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N Electrical characteristics
5/19
2 Electrical characteristics

(TCASE=25 °C unless otherwise specified)
Table 5. On/off states
Characteristic value at turn off on inductive load
Table 6. Dynamic
Pulsed: pulse duration = 300µs, duty cycle 1.5% Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Electrical characteristics STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N
6/19
Table 7. Switching times
Table 8. Source drain diode
Pulse width limited by safe operating area Pulsed: pulse duration = 300µs, duty cycle 1.5%
STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N Electrical characteristics
7/19
2.1 Electrical characteristics (curves)


Figure 2. Safe operating area for TO-220 - 2 PAK - I2 PAK
Figure 3. Thermal impedance for TO-220 - 2 PAK - I2 PAK
Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP
Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247
Electrical characteristics STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N
8/19
Figure 8. Output characteristics Figure 9. Transfer characteristics
Figure 10. Transconductance Figure 11. Static drain-source on resistance
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N Electrical characteristics
9/19
Figure 14. Normalized gate threshold voltage
vs temperature
Figure 15. Normalized on resistance vs
temperature
Figure 16. Source-drain diode forward
characteristics
Figure 17. Normalized B VDSS vs temperature
Test circuit STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N
10/19 Test circuit
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
Figure 20. Test circuit for inductive load
switching and diode recovery times
Figure 21. Unclamped Inductive load test
circuit
Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED