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Partno	Mfg	Dc	Qty	Available	Descript
STF21N65M5	ST	N/a	8	avai	N-channel 650 V, 0.150 Ohm, 17 A MDmesh(TM) V Power MOSFET in TO-220FP
STP21N65M5	ST	N/a	5	avai	N-channel 650 V, 0.150 Ohm, 17 A MDmesh(TM) V Power MOSFET in TO-220

STF21N65M5 ,N-channel 650 V, 0.150 Ohm, 17 A MDmesh(TM) V Power MOSFET in TO-220FPElectrical characteristics(T = 25 °C unless otherwise specified)CTable 4. On /off statesSymbol Para ..
STF21NM60ND ,N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in TO-220FP packageElectrical characteristics(T =25°C unless otherwise specified)CASETable 5. On/off statesValueSymbol ..
STF22NM60N ,N-channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET in TO-220FPElectrical characteristics(Tcase = 25 °C unless otherwise specified)Table 5. On /off statesSymbol P ..
STF23NM50N ,N-channel 500 V, 0.162 Ohm, 17 A, TO-220FP MDmesh(TM) II Power MOSFETAbsolute maximum ratingsValueSymbol Parameter UnitTO-220, D²PAK TO-247 TO-220FPV Drain-source volta ..
STF24NF12 , N-channel 120V - 0.070Ω - 24A TO-220FP Low gate charge STripFET™ II MOSFET
STF24NM60N ,N-channel 600 V, 0.168 Ohm, 17 A MDmesh(TM) II Power MOSFET TO-220FPAbsolute maximum ratingsValue2Symbol Parameter I PAK UnitTO-220 TO-220FPTO-247V Gate- source voltag ..
SUM70N03-09CP ,N-Channel 30-V (D-S), 175C MOSFET
SUM85N03-06P ,N-Channel 30-V (D-S) 175C MOSFET
SUM85N03-07P ,N-Channel 30-V (D-S) 175C MOSFET
SUM85N15-19 ,N-Channel 150-V (D-S) 175C MOSFETS-04889—Rev. A, 15-Oct-01 1SUM85N15-19New ProductVishay Siliconix
   ..
SUM90P10-19L , P-Channel 100-V (D-S) MOSFET
SUM90P10-19L , P-Channel 100-V (D-S) MOSFET

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STF21N65M5-STP21N65M5
N-channel 650 V, 0.150 Ohm, 17 A MDmesh(TM) V Power MOSFET in D2PAK
May 2011 Doc ID 15427 Rev 4 1/22
STB21N65M5, STF21N65M5
STI21N65M5, STP21N65M5, STW21N65M5
N-channel 650 V , 0.150 Ω , 17 A MDmesh™ V Power MOSFET
D²P AK, TO-220FP , TO-220, I²P AK, TO-247
Features Worldwide best RDS(on) * area Higher V DSS rating High dv/dt capability Excellent switching performance 100% avalanche tested
Application
Switching applications
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Figure 1. Internal schematic diagram

Limited only by maximum temperature allowed
Table 1. Device summary
Contents STB/F/I/P/W21N65M5
2/22 Doc ID 15427 Rev 4
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
STB/F/I/P/W21N65M5 Electrical ratings
Doc ID 15427 Rev 4 3/22
1 Electrical ratings

Table 2. Absolute maximum ratings Limited only by maximum temperature allowed. Pulse width limited by safe operating area. ISD ≤ 17 A, di/dt ≤ 400 A/µs; VPeak < V(BR)DSS, VDD = 400 V.
Table 3. Thermal data
Electrical characteristics STB/F/I/P/W21N65M5
4/22 Doc ID 15427 Rev 4
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Table 5. Dynamic Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS.
STB/F/I/P/W21N65M5 Electrical characteristics
Doc ID 15427 Rev 4 5/22
Table 6. Switching times
Table 7. Source drain diode Pulse width limited by safe operating area. Pulsed: pulse duration = 300 µs, duty cycle 1.5%