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STF20NM65NSTN/a150avaiN-channel 650 V, 0.25 Ohm typ., 15 A MDmesh(TM) II Power MOSFET in TO-220FP package


STF20NM65N ,N-channel 650 V, 0.25 Ohm typ., 15 A MDmesh(TM) II Power MOSFET in TO-220FP packageElectrical characteristics(T = 25 °C unless otherwise specified).C Table 5. On/off statesSymbol Par ..
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STF20NM65N
N-channel 650 V, 0.25 Ohm typ., 15 A MDmesh(TM) II Power MOSFET in TO-220FP package
May 2011 Doc ID 13845 Rev 2 1/16
STP20NM65N
STF20NM65N

N-channel 650 V , 0.250 Ω , 15 A TO-220, TO-220FP
second generation MDmesh™ Power MOSFET
Features
100 % avalanche tested Low input capacitance and gate charge Low gate input resistance
Application
Switching applications
Description

These devices are N-channel Power MOSFETs
realized using the second generation MDmesh™
technology. This revolutionary Power MOSFET
associates a new vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.

Figure 1. Internal schematic diagram


Table 1. Device summary
Contents STP20NM65N, STF20NM65N
2/16 Doc ID 13845 Rev 2
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristecs (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
STP20NM65N, STF20NM65N Electrical ratings
Doc ID 13845 Rev 2 3/16
1 Electrical ratings
Table 2. Absolute maximum ratings
Limited only by maximum temperature allowed. Pulse width limited by safe operating area. ISD ≤ 15 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80 % V(BR)DSS.
Table 3. Thermal data
Table 4. Avalanche characteristics
Electrical characteristics STP20NM65N, STF20NM65N
4/16 Doc ID 13845 Rev 2
2 Electrical characteristics

(TC = 25 °C unless otherwise specified).
Table 5. On/off states
Table 6. Dynamic
Coss eq: defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80 % VDSS.
Table 7. Switching times
STP20NM65N, STF20NM65N Electrical characteristics
Doc ID 13845 Rev 2 5/16
Table 8. Source drain diode
Pulse width limited by safe operating area. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %.
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