STF20NM50D ,N-CHANNEL 500V 0.22 OHM 20A TO-220/TO-220FP/D2PAK FDMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP20NM50FDSTF20NM50DSTB20NM50FDV Drain-source V ..
STF20NM60D ,N-CHANNEL 600V 0.26 OHM 20A TO-220 TO-220FP TO-247 FDMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP20NM60FD STF20NM60D STW20NM60FDV Drain-source ..
STF20NM65N ,N-channel 650 V, 0.25 Ohm typ., 15 A MDmesh(TM) II Power MOSFET in TO-220FP packageElectrical characteristics(T = 25 °C unless otherwise specified).C Table 5. On/off statesSymbol Par ..
STF21N65M5 ,N-channel 650 V, 0.150 Ohm, 17 A MDmesh(TM) V Power MOSFET in TO-220FPElectrical characteristics(T = 25 °C unless otherwise specified)CTable 4. On /off statesSymbol Para ..
STF21NM60ND ,N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in TO-220FP packageElectrical characteristics(T =25°C unless otherwise specified)CASETable 5. On/off statesValueSymbol ..
STF22NM60N ,N-channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET in TO-220FPElectrical characteristics(Tcase = 25 °C unless otherwise specified)Table 5. On /off statesSymbol P ..
SUM65N20-30 ,N-Channel 200-V (D-S) 175C MOSFET
SUM70N03-09CP ,N-Channel 30-V (D-S), 175C MOSFET
SUM85N03-06P ,N-Channel 30-V (D-S) 175C MOSFET
SUM85N03-07P ,N-Channel 30-V (D-S) 175C MOSFET
SUM85N15-19 ,N-Channel 150-V (D-S) 175C MOSFETS-04889—Rev. A, 15-Oct-01 1SUM85N15-19New ProductVishay Siliconix ..
SUM90P10-19L , P-Channel 100-V (D-S) MOSFET
STF20NM50D
N-CHANNEL 500V 0.22 OHM 20A TO-220/TO-220FP/D2PAK FDMESH POWER MOSFET
1/11November 2003
STP20NM50FD
STF20NM50D- STB20NM50FDN-CHANNEL 500V- 0.22Ω - 20A TO-220/TO-220FP/D2 PAK
FDmesh™ Power MOSFET (with FAST DIODE) TYPICAL RDS(on)= 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE
CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTIONThe FDmesh™ associatesall advantagesof re-
duced on-resistance and fast switching withanin-
trinsic fast-recovery body diode.Itis therefore
strongly recommended for bridge topologies,in
particular ZVS phase-shift converters.
APPLICATIONS ZVS PHASE-SHIFT FULL BRIDGE
CONVERTERS FOR SMPS AND WELDING
EQUIPMENT
ORDERING INFORMATION
STP20NM50FD- STF20NM50D- STB20NM50FD2/11
ABSOLUTE MAXIMUM RATINGS) Pulse width limitedby safe operating area
(1)ISD≤ 20A, di/dt ≤ 200 A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX.
(*) Limited onlyby maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE=25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
3/11
STP20NM50FD- STF20NM50D- STB20NM50FD
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
(1) Pulsed: Pulse duration= 300μs, duty cycle1.5%.
(2) Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss whenVDS increases from0to 80% VDSS.
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area.
STP20NM50FD- STF20NM50D- STB20NM50FD4/11
Safe Operating Area For TO-220/ I²PAK Thermal Impedance For TO-220/ I²PAK
Output Characteristics
Transconductance
Transfer Characteristics
Static Drain-source On Resistance
5/11
STP20NM50FD- STF20NM50D- STB20NM50FD
Capacitance VariationsGate Chargevs Gate-source Voltage
Source-drain Diode Forward Characteristics
Normalized On Resistancevs TemperatureNormalized Gate Thereshold Voltagevs Temp.
STP20NM50FD- STF20NM50D- STB20NM50FD6/11
Fig.5: Test For Inductive
Fig.4: Gate Charge test Circuit
Fig.3: Switching
Resistive Load
