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STF15NM65NSTN/a1430avaiN-channel 650 V, 0.35 Ohm typ., 12 A MDmesh(TM) II Power MOSFET in TO-220FP package


STF15NM65N ,N-channel 650 V, 0.35 Ohm typ., 12 A MDmesh(TM) II Power MOSFET in TO-220FP packageElectrical characteristics(T = 25 °C unless otherwise specified).CASETable 5. On/off statesSymbol P ..
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STF15NM65N
N-channel 650 V, 0.35 Ohm typ., 12 A MDmesh(TM) II Power MOSFET in TO-220FP package
July 2013 DocID13853 Rev 3 1/16
STF15NM65N, STFI15NM65N,
STP15NM65N

N-channel 650 V, 0.35 Ω typ., 12 A MDmesh™ II Power MOSFETs
in TO-220FP , I²PAKFP and TO-220 packages
Datasheet - production data
Figure 1. Internal schematic diagram
Features
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
Applications
Switching applications
Description

These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Table 1. Device summary
Contents STF15NM65N, STFI15NM65N, STP15NM65N
2/16 DocID13853 Rev 3
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
DocID13853 Rev 3 3/16
STF15NM65N, STFI15NM65N, STP15NM65N Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Limited by maximum junction temperature. Pulse width limited by safe operating area. ISD ≤ 12 A, di/dt ≤ 400 A/μs, VDSpeak ≤ V(BR)DSS, VDD = 80 % V(BR)DSS.
Table 3. Thermal data
Table 4. Avalanche characteristics
Electrical characteristics STF15NM65N, STFI15NM65N, STP15NM65N
4/16 DocID13853 Rev 3
2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified).
Table 5. On/off states
Table 6. Dynamic
Cross eq: defined as a constant equivalent capacitance giving the same charging time as COSS when VDS
increases from 0 to 80 % VDSS.
Table 7. Switching times
DocID13853 Rev 3 5/16
STF15NM65N, STFI15NM65N, STP15NM65N Electrical characteristics
Table 8. Source drain diode
Pulse width limited by safe operating area. Pulsed: pulse duration = 300 μs, duty cycle 1.5 %
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