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STF11NM50NSTN/a90avaiN-channel 500 V, 0.4 Ohm, 8.5 A MDmesh(TM) II Power MOSFET in TO-220FP


STF11NM50N ,N-channel 500 V, 0.4 Ohm, 8.5 A MDmesh(TM) II Power MOSFET in TO-220FPAbsolute maximum ratingsValueSymbol Parameter UnitTO-220 DPAK TO-220FPV Drain-source voltage (V = 0 ..
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STF11NM50N
N-channel 500 V, 0.4 Ohm, 8.5 A MDmesh(TM) II Power MOSFET in DPAK

November 2010 Doc ID 17156 Rev 3 1/16
STD11NM50N
STF11NM50N, STP11NM50N

N-channel 500 V , 0.4 Ω , 8.5 A MDmesh™ II Power MOSFET
in DP AK, TO-220FP and TO-220
Features
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
Application

Switching applications
Description

These devices are made using the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.

Table 1. Device summary

Contents STD11NM50N, STF11NM50N, STP11NM50N

2/16 Doc ID 17156 Rev 3
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
STD11NM50N, STF11NM50N, STP11NM50N Electrical ratings
Doc ID 17156 Rev 3 3/16

1 Electrical ratings



Table 2. Absolute maximum ratings
Limited only by maximum temperature allowed Pulse width limited by safe operating area ISD ≤ 8.5 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS,VDD = 80% V(BR)DSS
Table 3. Thermal data
When mounted on 1inch² FR-4 board, 2 oz Cu
Table 4. Thermal data
Pulse width limited by TJMAX. Starting Tj = 25 °C, ID = IAR, VDD = 50 V.

Electrical characteristics STD11NM50N, STF11NM50N, STP11NM50N

4/16 Doc ID 17156 Rev 3
2 Electrical characteristics

(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Table 6. Dynamic
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS.
STD11NM50N, STF11NM50N, STP11NM50N Electrical characteristics
Doc ID 17156 Rev 3 5/16

Table 7. Switching times
Table 8. Source drain diode
Pulse width limited by safe operating area Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Electrical characteristics STD11NM50N, STF11NM50N, STP11NM50N
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220
Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP
Figure 6. Safe operating area for DPAK Figure 7. Thermal impedance for DPAK
STD11NM50N, STF11NM50N, STP11NM50N Electrical characteristics

Figure 8. Output characteristics Figure 9. Transfer characteristics
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
Figure 12. Capacitance variations Figure 13. Output capacitance stored energy

Electrical characteristics STD11NM50N, STF11NM50N, STP11NM50N
Figure 14. Normalized gate threshold voltage
vs temperature
Figure 15. Normalized on resistance vs
temperature
Figure 16. Normalized BVDSS vs temperature

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