STE53NA50 Fast Delivery |IC PHOENIX CO.,LIMITED

Home › S › S102 > STE53NA50,N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email

Partno	Mfg	Dc	Qty	Available	Descript
STE53NA50	STM	N/a	2	avai	N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STE53NA50 ,N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORSTE53NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTE53NA50 500 V ..
STE53NC50 ,N-CHANNEL 500V 0.070 OHM 53A ISOTOP POWERMESH II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)500 VDS GSV Drain- ..
STE5588SVB ,STe5588STe5588DVD and DVB decoderfor video and audio with DVD audio supportDATA BRIEFDESCRIPTION Figure 1. ..
STEVAL-IPE006V2 , High end meter Demonstration board
STEVAL-IPE006V2 , High end meter Demonstration board
STF10N62K3 ,N-channel 620 V, 0.68 Ohm typ., 8.4 A SuperMESH3(TM) Power MOSFET in TO-220FP packageElectrical characteristics(Tcase = 25 °C unless otherwise specified)Table 4. On /off statesSymbol P ..
SUD50N06-07L ,MOSFETsS-41133—Rev. A, 07-Jun-041SUD50N06-07LNew ProductVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OT ..
SUD50N06-16 ,N-Channel 60-V (D-S) 175C MOSFETS-31921—Rev. A, 15-Sep-03 1SUD50N06-16New ProductVishay SiliconixSPECIFICATIONS (T = 25C UNLESS O ..
SUD50P04-09L ,P-Channel 40-V (D-S) 175C MOSFETS-31261—Rev. A, 16-Jun-03 1SUD50P04-09LNew ProductVishay SiliconixSPECIFICATIONS (T = 25C UNLESS ..
SUD50P04-09L-E3 , P-Channel 40 V (D-S), 175 °C MOSFET
SUD50P04-09L-E3 , P-Channel 40 V (D-S), 175 °C MOSFET
SUD50P04-13L ,MOSFETsS-41267—Rev. A, 05-Jul-04 1SUD50P04-13LNew ProductVishay SiliconixSPECIFICATIONS (T = 25C UNLESS O ..

STE53NA50
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STE53NA50
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR TYPICAL RDS(on) = 0.075 Ω HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY VERY LARGE SOA - LARGE PEAK POWER
CAPABILITY EASY TO MOUNT SAME CURRENT CAPABILITY FOR THE
TWO SOURCE TERMINALS EXTREMELY LOW Rth (Junction to case) VERY LOW INTERNAL PARASITIC
INDUCTANCE ISOLATED PACKAGE UL RECOGNIZED
APPLICATIONS SMPS & UPS MOTOR CONTROL WELDING EQUIPMENT OUTPUT STAGE FOR PWM, ULTRASONIC
CIRCUITS
February 1998
ABSOLUTE MAXIMUM RATINGS
(•) Pulse width limited by safe operating area
1/7
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STE53NA50
2/7
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area for Thermal Impedance
STE53NA50
3/7
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STE53NA50
4/7
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Fig. 2: Gate Charge test Circuit
Normalized On Resistance vs Temperature
Fig. 1: Switching Times Test Circuits For
Resistive Load
Fig. 3: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STE53NA50
5/7
STE53NA50

TEL:86-533-2716050 FAX:86-533-2716790