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Partno	Mfg	Dc	Qty	Available	Descript
STD95N4F3	ST	N/a	20	avai	N-channel 40 V, 5.0 mOhm, 80 A, DPAK STripFET(TM) III Power MOSFET

STD95N4F3 ,N-channel 40 V, 5.0 mOhm, 80 A, DPAK STripFET(TM) III Power MOSFETAbsolute maximum ratingsSymbol Parameter Value UnitV Drain-source voltage 40 VDSV Gate-source volta ..
STD95NH02L ,N-CHANNEL 24VAbsolute Maximum ratingsSymbol Parameter Value UnitV (1) Drain-source Voltage Rating 30 VspikeV Dra ..
STD95NH02L-1 ,N-CHANNEL 24VELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: On/OffSymbol Parameter ..
STD95NH02LT4 ,N-CHANNEL 24VFeatures Figure 1: PackageTYPE V R IDSS DS(on) DSTD95NH02L 24 V < 0.005Ω 80(*) A

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STD95N4F3
N-channel 40 V, 5.0 mOhm, 80 A, D2PAK STripFET(TM) III Power MOSFET
December 2011 Doc ID 13288 Rev 4 1/20
STB95N4F3, STD95N4F3
STP95N4F3
N-channel 40 V , 5.0 mΩ , 80 A ST ripFET™ III
Power MOSFET in D²P AK, DP AK, TO-220
Features Standard threshold drive 100% avalanche tested
Applications Switching applications Automotive
Description
These devices are N-channel enhancement mode
Power MOSFETs produced using
STMicroelectronics’ STripFET™ III technology,
which is specifically designed to minimize on-
resistance and gate charge to provide superior
switching performance.

Table 1. Device summary
Contents STB95N4F3, STD95N4F3, STP95N4F3
2/20 Doc ID 13288 Rev 4
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
STB95N4F3, STD95N4F3, STP95N4F3 Electrical ratings
Doc ID 13288 Rev 4 3/20
1 Electrical ratings
Table 2. Absolute maximum ratings Current limited by package. Pulse width limited by safe operating area. ISD ≤ 80 A, di/dt ≤ 400A/µs, VDS ≤ V(BR)DSS, Tj ≤ Tjmax. Starting Tj = 25 °C, ID = 40 A, VDD = 30 V.
Table 3. Thermal resistance When mounted on 1inch² FR-4 2Oz Cu board.
Electrical characteristics STB95N4F3, STD95N4F3, STP95N4F3
4/20 Doc ID 13288 Rev 4
2 Electrical characteristics
(TCASE=25 °C unless otherwise specified)
Table 4. Static
Table 5. Dynamic
STB95N4F3, STD95N4F3, STP95N4F3 Electrical characteristics
Doc ID 13288 Rev 4 5/20
Table 6. Switching on/off (inductive load)
Table 7. Source drain diode Pulse width limited by safe operating area Pulsed: pulse duration = 300 µs, duty cycle 1.5%