STD7NS20 ,N-CHANNEL 200VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)200 VDS GSV Drain- ..
STD7NS20T4 ,N-CHANNEL 200VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STD7NS20T4 ,N-CHANNEL 200VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 200 VDS GSV Drain- ..
STD815CP40 ,Complementary transistor pair in a single packageAbsolute maximum ratingsValueSymbol Parameter UnitNPN PNPV Collector-base voltage (I = 0) 700 500 V ..
STD815CP40 ,Complementary transistor pair in a single packageElectrical characteristicsSymbol Parameter Test conditions Min. Typ. Max. UnitFor NPN:V = 700 V 1 m ..
STD83003 ,HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORSTD83003®HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR■ REVERSE PINS OUT Vs STANDARD IPAK(TO-251) ..
SUD25N06-45L ,N-Channel Enhancement-Mode MOSFETs, Logic Level FaxBack 408-970-5600S-57253—Rev. E, 24-Feb-982-1SUD25N06-45LVishay Siliconix
STD7NS20
N-CHANNEL 200V
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PRELIMINARY DATAJuly 2002
STD7NS20
STD7NS20-1N-CHANNEL 200V - 0.35Ω - 7A DPAK / IPAK
MESH OVERLAY™ MOSFET TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
DESCRIPTIONUsing the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
(1) ISD≤ 7A, di/dt≤300 A/μs, VDD≤ V(BR)DSS, Tj≤TjMAX
STD7NS20 / STD7NS20-1
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
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STD7NS20 / STD7NS20-1
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
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STD7NS20 / STD7NS20-1
STD7NS20 / STD7NS20-1
