STD60NF55L-1 ,N-CHANNEL 55V 0.012 OHM 60A DPAK STRIPFET POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)55 VDS GSV Drain-g ..
STD60NF55LAT4 ,N-channel 55 V, 0.012 Ohm, 60 A DPAK STripFET(TM) II Power MOSFETElectrical characteristics(T =25°C unless otherwise specified)CASETable 4. On/off statesSymbol Para ..
STD60NF55LT4 ,N-CHANNEL 55V 0.012 OHM 60A DPAK STRIPFET POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STD60NH03L ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STD60NH03LT4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)30 VDS GSV Drain-g ..
STD60NH03L-T4 ,N-CHANNEL 30VSTD60NH03LN-CHANNEL 30V - 0.0075 Ω - 60A DPAK/IPAKSTripFET™ III POWER MOSFETTYPE V R IDSS DS(on) DS ..
SUB85N04-03 ,N-Channel 40-V (D-S) 175C MOSFET FaxBack 408-970-5600S-00654—Rev. B, 27-Mar-002-3C – Capacitance (pF) g – Transconductance (S)f ..
SUB85N04-04 ,N-Channel 40-V (D-S) 175C MOSFETS-41261—Rev. C, 05-Jul-041SUP/SUB85N04-04Vishay SiliconixSPECIFICATIONS (T =25C UNLESS OTHERWISE N ..
SUB85N08-08 ,N-Channel 75-V (D-S) 175C MOSFETSUP/SUB85N08-08New ProductVishay SiliconixN-Channel 75-V (D-S) 175C MOSFET
STD60NF55L-1-STD60NF55LT4
N-CHANNEL 55V 0.012 OHM 60A DPAK STRIPFET POWER MOSFET
1/9April 2002
STD60NF55LN-CHANNEL 55V - 0.012Ω - 60A DPAK
STripFET™ II POWER MOSFET
(1)ISD ≤40A, di/dt ≤350A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj=25°C, ID=30A, VDD=20V TYPICAL RDS(on) = 0.012Ω LOW THRESHOLD DRIVE ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
DESCRIPTIONThis Power Mosfet is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteris-
tics and less critical alignment steps therefore a re-
markable manufacturing reproducibility..
APPLICATIONS AUTOMOTIVE MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS(�) Pulse width limited by safe operating area
STD60NF55L
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/9
STD60NF55L
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Thermal ImpedanceSafe Operating Area
STD60NF55L
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage Capacitance Variations
Transconductance
Output Characteristics
5/9
STD60NF55L
Source-drain Diode Forward Characteristics
Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.
STD60NF55L
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
