STD60NF3LL-T4 ,N-CHANNEL 30V 0.0075 OHM 60A DPAK STRIPFET II POWER MOSFETSTD60NF3LLN-CHANNEL 30V - 0.0075Ω - 60A DPAKSTripFET™ II POWER MOSFETTYPE V R IDSS DS(on) DSTD60NF3 ..
STD60NF55L ,N-CHANNEL 55V 0.012 OHM 60A DPAK STRIPFET POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)55 VDS GSV Drain-g ..
STD60NF55L-1 ,N-CHANNEL 55V 0.012 OHM 60A DPAK STRIPFET POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)55 VDS GSV Drain-g ..
STD60NF55LAT4 ,N-channel 55 V, 0.012 Ohm, 60 A DPAK STripFET(TM) II Power MOSFETElectrical characteristics(T =25°C unless otherwise specified)CASETable 4. On/off statesSymbol Para ..
STD60NF55LT4 ,N-CHANNEL 55V 0.012 OHM 60A DPAK STRIPFET POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STD60NH03L ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
SUB85N03-07P ,N-Channel 30-V (D-S) 175C MOSFETSUP/SUB85N03-07PNew ProductVishay SiliconixN-Channel 30-V (D-S) 175C MOSFET
STD60NF3LLT4-STD60NF3LL-T4
N-CHANNEL 30V 0.0075 OHM 60A DPAK STRIPFET II POWER MOSFET
1/9April 2002
STD60NF3LLN-CHANNEL 30V - 0.0075Ω - 60A DPAK
STripFET™ II POWER MOSFET
(1) Starting Tj=25°C, ID=30A, VDD=27.5V TYPICAL RDS(on) = 0.0075Ω OPTIMAL RDS(ON) x Qg TRADE-OFF @ 4.5V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
DESCRIPTIONThis application specific Power Mosfet is the third
genaration of STMicroelectronics unique “Single
Feature Size™” strip-based process. The result-
ing transistor shows the best trade-off between on-
resistance ang gate charge. When used as high
and low side in buck regulators, it gives the best
performance in terms of both conduction and
switching losses. This is extremely important for
motherboards where fast switching and high effi-
ciency are of paramount importance.
APPLICATIONS SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC
CONVERTERS
ABSOLUTE MAXIMUM RATINGS(�) Pulse width limited by safe operating area
STD60NF3LL
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/9
STD60NF3LL
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Thermal ImpedenceSafe Operating Area
STD60NF3LL
Transfer Characteristics
Gate Charge vs Gate-source Voltage Capacitance Variations
Transconductance Static Drain-source On Resistance
Output Characteristics
5/9
STD60NF3LL
Source-drain Diode Forward Characteristics
Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.
STD60NF3LL
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
