STD60NF06 ,N-CHANNEL 60 VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 60 VDS GSV Drain- ..
STD60NF06T4 ,N-CHANNEL 60 VSTD60NF06N-CHANNEL 60V - 0.014Ω - 60A DPAKSTripFET™ II POWER MOSFETTYPE V R IDSS DS(on) DSTD60NF06 ..
STD60NF3LL ,N-CHANNEL 30V 0.0075 OHM 60A DPAK STRIPFET II POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STD60NF3LLT4 ,N-CHANNEL 30V 0.0075 OHM 60A DPAK STRIPFET II POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STD60NF3LL-T4 ,N-CHANNEL 30V 0.0075 OHM 60A DPAK STRIPFET II POWER MOSFETSTD60NF3LLN-CHANNEL 30V - 0.0075Ω - 60A DPAKSTripFET™ II POWER MOSFETTYPE V R IDSS DS(on) DSTD60NF3 ..
STD60NF55L ,N-CHANNEL 55V 0.012 OHM 60A DPAK STRIPFET POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)55 VDS GSV Drain-g ..
SUB75P05-08 ,P-Channel 55-V (D-S) 175C MOSFET FaxBack 408-970-5600S-99404—Rev. B, 29-Nov-992-3C – Capacitance (pF) g – Transconductance (S) ..
SUB85N02-03 ,N-Channel 20-V (D-S) 175C MOSFETS-03181—Rev. A, 05-Mar-011SUP/SUB85N02-03New ProductVishay Siliconix ..
SUB85N03-04P ,N-Channel 30-V (D-S) 175C MOSFETS-20120—Rev. B, 12-Mar-023C – Capacitance (pF) g – Transconductance (S)fs I – Drain Current (A)D ..
SUB85N03-07P ,N-Channel 30-V (D-S) 175C MOSFETSUP/SUB85N03-07PNew ProductVishay SiliconixN-Channel 30-V (D-S) 175C MOSFET
STD60NF06
N-CHANNEL 60 V
1/9October 2002
STD60NF06N-CHANNEL 60V - 0.014Ω - 60A DPAK
STripFET™ II POWER MOSFET
(1) ISD≤ 60A, di/dt≤200 A/μs, VDD≤ 24V, Tj≤TjMAX TYPICAL RDS(on) = 0.014Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTIONThis Power Mosfet series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
APPLICATIONS HIGH-EFFICIENCY DC-DC CONVERTERS UPS AND MOTOR CONTROL AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS(�) Pulse width limited by safe operating area
STD60NF06
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/9
STD60NF06
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
STD60NF06
Safe Operating Area for DPAK
Static Drain-source On Resistance
Thermal Impedence for DPAK
Transconductance
Transfer CharacteristicsOutput Characteristics
5/9
STD60NF06
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Gate Charge vs Gate-source Voltage
Normalized On Resistance vs Temperature
STD60NF06
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
