STD5NK60ZT4 ,N-CHANNEL 600VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP5NK60ZSTP5NK60ZFPSTD5NK60ZV Drain-source Volt ..
STD5NM50 ,N-CHANNEL 500VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STD5NM50-1 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 500 VDS GSV Drain ..
STD5NM50T4 ,N-CHANNEL 550V @TjmaxELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STD5NM60 ,N-CHANNEL 600VELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASEON/OFFSymbol Parameter Test Cond ..
STD5NM60T4 ,N-CHANNEL 650V @Tjmax- 0.9 OHMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTD5NM60STP8NM60 STP8NM60FPSTD5NM60-1V Drain-sou ..
SUB75N03-07 ,N-Channel 30-V (D-S) 175 MOSFETSUP/SUB75N03-07Vishay SiliconixN-Channel 30-V (D-S) 175C MOSFET
STD5NK60ZT4
N-CHANNEL 600V
1/12October 2003
STP5NK60Z- STP5NK60ZFP
STD5NK60ZN-CHANNEL 600V- 1.2Ω - 5A TO-220/TO-220FP/DPAK
Zener-Protected SuperMESH™Power MOSFET TYPICAL RDS(on)= 1.2Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTIONThe SuperMESH™ seriesis obtained through an
extreme optimizationof ST’s well established strip-
based PowerMESH™ layout.In additionto pushing
on-resistance significantly down, special careis tak-to ensurea very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full rangeof high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC LIGHTING
ORDERING INFORMATION
STP5NK60Z- STP5NK60ZFP- STD5NK60Z2/12
ABSOLUTE MAXIMUM RATINGS) Pulse width limitedby safe operating area
(1)ISD ≤5A, di/dt ≤200A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX.
(*) Limited onlyby maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE(#) When mountedon minimum Footprint
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionallybe
applied from gateto source.In this respect the Zener voltageis appropriateto achievean efficient and
cost-effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the
usageof external components.
3/12
STP5NK60Z- STP5NK60ZFP- STD5NK60Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
STP5NK60Z- STP5NK60ZFP- STD5NK60Z4/12
Safe Operating Area For TO-220FPSafe Operating Area For TO-220/DPAK
Thermal Impedance For TO-220/DPAK
Output Characteristics
Transfer Characteristics
5/12
STP5NK60Z- STP5NK60ZFP- STD5NK60Z
Static Drain-source On Resistance
Normalized On Resistancevs TemperatureNormalized Gate Threshold Voltagevs Temp.
Capacitance VariationsGate Chargevs Gate-source Voltage
Transconductance
STP5NK60Z- STP5NK60ZFP- STD5NK60Z6/12
Maximum Avalanche Energyvs Temperature
Normalized BVDSSvs TemperatureSource-drain Diode Forward Characteristics
