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STD5NE10LT4STN/a48246avaiN-CHANNEL 100V


STD5NE10LT4 ,N-CHANNEL 100VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVDS Drain-source Voltage (VGS =0) 100 VV 100 VDr ..
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STD5NE10LT4
N-CHANNEL 100V
STD5NE10L- CHANNEL 100V- 0.3 Ω - 5A- DPAK/IPAK
STripFET POWER MOSFET
PRELIMINARY DATA
TYPICAL RDS(on)= 0.3Ω EXCEPTIONAL dv/dtCAPABILITY AVALANCHERUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED
CHARACTERIZATION FOR TAPE& REEL AND OTHER
PACKAGING OPTIONS CONTACT SALES
OFFICES
DESCRIPTION

This Power MOSFETis the latest developmentof
STMicroelectronics unique” Single Feature
Size” strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalanche charac-
teristics and less critical alignment steps therefore remarkable manufacturingreproducibility.
APPLICATIONS
DC MOTOR CONTROL (DISK DRIVES,etc.) DC-DC& DC-AC CONVERTERS SYNCHRONOUS RECTIFICATION
INTERNAL SCHEMATIC DIAGRAM
TYPE VDSS RDS(on) ID

STD5NE10L 100V < 0.4Ω 5A
October 1998
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit

VDS Drain-source Voltage (VGS =0) 100 V
VDGR Drain- gate Voltage (RGS =20 kΩ) 100 V
VGS Gate-source Voltage ±20 V Drain Current (continuous)atTc =25o C5 A Drain Current (continuous)atTc =100o C3.5 A
IDM(•) Drain Current (pulsed) 20 A
Ptot Total DissipationatTc =25o C25 W
Derating Factor 0.2 W/oC
dv/dt(1) Peak Diode Recovery voltage slope 6 V/ns
Tstg Storage Temperature -65to 150 oC Max. Operating Junction Temperature 150 oC
(•) Pulse widthlimitedby safe operatingarea ( 1)ISD≤5A, di/dt≤ 200 A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX
DPAK
TO-252

(Suffix ”T4”)
IPAK
TO-251

(Suffix ”-1”)
1/5
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
275 C/W C/W C/WC
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit

IAR Avalanche Current, Repetitiveor Not-Repetitive
(pulse width limitedbyTj max)
EAS Single Pulse Avalanche Energy
(startingTj =25oC,ID =IAR,VDD =30V) mJ
ELECTRICAL CHARACTERISTICS
(Tcase =25oC unless otherwisespecified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source
Breakdown Voltage =250 μAVGS =0 100 V
IDSS Zero Gate Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS= Max Rating Tc =100oC
IGSS Gate-body Leakage
Current (VDS =0)
VGS= ± 20V ± 100 nA(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit

VGS(th) Gate Threshold
Voltage
VDS =VGS ID= 250 μA 11.7 2.5 V
RDS(on) Static Drain-source On
Resistance
VGS =10VID =2.5A
VGS =5VID =2.5A
ID(on) On State Drain Current VDS >ID(on) xRDS(on)max
VGS =10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit

gfs (∗)Forward
Transconductance
VDS >ID(on) xRDS(on)max ID =2.5A 2 S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS =25Vf=1 MHz VGS =0 345
STD5NE10L
2/5
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit

td(on)
Turn-on Time
Rise Time
VDD =50V ID =2.5A =4.7 Ω VGS =5V
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =80V ID =5A VGS =5V 10 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit

tr(Voff)
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD =80V ID =5A =4.7 Ω VGS =10V
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit

ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD(∗) Forward On Voltage ISD =8A VGS =0 1.5 V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD =5A di/dt= 100 A/μs
VDD =30V Tj =150oC
(∗) Pulsed: Pulse duration= 300μs, duty cycle 1.5%
(•) Pulse width limitedby safe operating area
STD5NE10L

3/5
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
2.2 2.4 0.086 0.094 0.9 1.1 0.035 0.043 0.03 0.23 0.001 0.009 0.64 0.9 0.025 0.035 5.2 5.4 0.204 0.212 0.45 0.6 0.017 0.023 0.48 0.6 0.019 0.023 6 6.2 0.236 0.244 6.4 6.6 0.252 0.260 4.4 4.6 0.173 0.181 9.35 10.1 0.368 0.397 0.8 0.031 0.6 1 0.023 0.039L2DETAIL”A”
DETAIL”A”
TO-252 (DPAK) MECHANICAL DATA

0068772-B
STD5NE10L

4/5
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
2.2 2.4 0.086 0.094 0.9 1.1 0.035 0.043 0.7 1.3 0.027 0.051 0.64 0.9 0.025 0.031 5.2 5.4 0.204 0.212 0.85 0.033 0.3 0.012 0.95 0.037 0.45 0.6 0.017 0.023 0.48 0.6 0.019 0.023 6 6.2 0.236 0.244 6.4 6.6 0.252 0.260 4.4 4.6 0.173 0.181 15.9 16.3 0.626 0.641 9 9.4 0.354 0.370 0.8 1.2 0.031 0.047 0.8 1 0.031 0.039 LL2 G ==
TO-251 (IPAK) MECHANICAL DATA

0068771-E
STD5NE10L

5/5
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grantedby implicationor otherwise underany patentor patent rightsof STMicroelectronics. Specification mentionedinthis publicationare
subject tochange without notice. This publication supersedesand replacesall information previously supplied. STMicroelectronics products
arenot authorizedforuseas critical components inlife support devicesor systems without express written approvalof STMicroelectronics.
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