STD5NE10L Fast Delivery |IC PHOENIX CO.,LIMITED

STD5NE10L ,N-CHANNEL 100VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVDS Drain-source Voltage (VGS =0) 100 VV 100 VDr ..
STD5NE10LT4 ,N-CHANNEL 100VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVDS Drain-source Voltage (VGS =0) 100 VV 100 VDr ..
STD5NE10T4 ,N-CHANNEL 100VSTD5NE10®N - CHANNEL 100V - 0.32 Ω - 5A TO-251/TO-252STripFET™ POWER MOSFETTYPE V R IDSS DS(on) ..
STD5NK40Z ,N-CHANNEL 400VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTD5NK40ZSTP5NK40Z STP5NK40ZFPSTD5NK40Z-1V Drain ..
STD5NK50Z ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTD5NK50ZSTP5NK50Z STP5NK50ZFPSTD5NK50Z-1V Drain ..
STD5NK50ZT4 ,N-CHANNEL 500VAbsolute Maximum ratingsSymbol Parameter Value UnitSTP5NK50Z STD5NK50ZSTP5NK50ZFPSTB5NK50Z/-1 STD5N ..
SUB70N04-10 ,N-Channel 40-V (D-S) 175C MOSFET, Logic LevelS-05110—Rev. D, 10-Dec-012-3C – Capacitance (pF) g – Transconductance (S) I – Drain Current (A)f ..
SUB70N04-10 ,N-Channel 40-V (D-S) 175C MOSFET, Logic LevelS-05110—Rev. D, 10-Dec-012-1SUP/SUB70N04-10Vishay Siliconix ..
SUB70N04-10 ,N-Channel 40-V (D-S) 175C MOSFET, Logic LevelSUP/SUB70N04-10Vishay SiliconixN-Channel 40-V (D-S), 175C MOSFET V (V) r () I (A)(BR) ..
SUB70N06-14 ,N-Channel Enhancement-Mode Trans FaxBack 408-970-5600S-57253—Rev. C, 24-Feb-982-3C – Capacitance (pF) g – Transconductance (S) ..
SUB75N03-04 ,N-Channel 30-V (D-S) 175C MOSFETSUP/SUB75N03-04Vishay SiliconixN-Channel 30-V (D-S), 175C MOSFET V (V) r () I (A)(BR) ..
SUB75N03-07 ,N-Channel 30-V (D-S) 175 MOSFETSUP/SUB75N03-07Vishay SiliconixN-Channel 30-V (D-S) 175C MOSFET

STD5NE10L
N-CHANNEL 100V
STD5NE10L- CHANNEL 100V- 0.3 Ω - 5A- DPAK/IPAK
STripFET POWER MOSFET
PRELIMINARY DATA TYPICAL RDS(on)= 0.3Ω EXCEPTIONAL dv/dtCAPABILITY AVALANCHERUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED
CHARACTERIZATION FOR TAPE& REEL AND OTHER
PACKAGING OPTIONS CONTACT SALES
OFFICES
DESCRIPTION
This Power MOSFETis the latest developmentof
STMicroelectronics unique” Single Feature
Size” strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalanche charac-
teristics and less critical alignment steps therefore remarkable manufacturingreproducibility.
APPLICATIONS DC MOTOR CONTROL (DISK DRIVES,etc.) DC-DC& DC-AC CONVERTERS SYNCHRONOUS RECTIFICATION
INTERNAL SCHEMATIC DIAGRAM
TYPE VDSS RDS(on) ID
STD5NE10L 100V < 0.4Ω 5A
October 1998
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS =0) 100 V
VDGR Drain- gate Voltage (RGS =20 kΩ) 100 V
VGS Gate-source Voltage ±20 V Drain Current (continuous)atTc =25o C5 A Drain Current (continuous)atTc =100o C3.5 A
IDM(•) Drain Current (pulsed) 20 A
Ptot Total DissipationatTc =25o C25 W
Derating Factor 0.2 W/oC
dv/dt(1) Peak Diode Recovery voltage slope 6 V/ns
Tstg Storage Temperature -65to 150 oC Max. Operating Junction Temperature 150 oC
(•) Pulse widthlimitedby safe operatingarea ( 1)ISD≤5A, di/dt≤ 200 A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX
DPAK
TO-252
(Suffix ”T4”)
IPAK
TO-251
(Suffix ”-1”)
1/5
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
275 C/W C/W C/WC
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitiveor Not-Repetitive
(pulse width limitedbyTj max)
EAS Single Pulse Avalanche Energy
(startingTj =25oC,ID =IAR,VDD =30V) mJ
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwisespecified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage =250 μAVGS =0 100 V
IDSS Zero Gate Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS= Max Rating Tc =100oC
IGSS Gate-body Leakage
Current (VDS =0)
VGS= ± 20V ± 100 nA(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold
Voltage
VDS =VGS ID= 250 μA 11.7 2.5 V
RDS(on) Static Drain-source On
Resistance
VGS =10VID =2.5A
VGS =5VID =2.5A
ID(on) On State Drain Current VDS >ID(on) xRDS(on)max
VGS =10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗)Forward
Transconductance
VDS >ID(on) xRDS(on)max ID =2.5A 2 S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS =25Vf=1 MHz VGS =0 345
STD5NE10L
2/5
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)
Turn-on Time
Rise Time
VDD =50V ID =2.5A =4.7 Ω VGS =5V
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =80V ID =5A VGS =5V 10 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
tr(Voff)
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD =80V ID =5A =4.7 Ω VGS =10V
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD(∗) Forward On Voltage ISD =8A VGS =0 1.5 V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD =5A di/dt= 100 A/μs
VDD =30V Tj =150oC
(∗) Pulsed: Pulse duration= 300μs, duty cycle 1.5%
(•) Pulse width limitedby safe operating area
STD5NE10L
3/5
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX. 2.2 2.4 0.086 0.094 0.9 1.1 0.035 0.043 0.03 0.23 0.001 0.009 0.64 0.9 0.025 0.035 5.2 5.4 0.204 0.212 0.45 0.6 0.017 0.023 0.48 0.6 0.019 0.023 6 6.2 0.236 0.244 6.4 6.6 0.252 0.260 4.4 4.6 0.173 0.181 9.35 10.1 0.368 0.397 0.8 0.031 0.6 1 0.023 0.039L2DETAIL”A”
DETAIL”A”
TO-252 (DPAK) MECHANICAL DATA
0068772-B
STD5NE10L
4/5
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX. 2.2 2.4 0.086 0.094 0.9 1.1 0.035 0.043 0.7 1.3 0.027 0.051 0.64 0.9 0.025 0.031 5.2 5.4 0.204 0.212 0.85 0.033 0.3 0.012 0.95 0.037 0.45 0.6 0.017 0.023 0.48 0.6 0.019 0.023 6 6.2 0.236 0.244 6.4 6.6 0.252 0.260 4.4 4.6 0.173 0.181 15.9 16.3 0.626 0.641 9 9.4 0.354 0.370 0.8 1.2 0.031 0.047 0.8 1 0.031 0.039 LL2 G ==
TO-251 (IPAK) MECHANICAL DATA
0068771-E
STD5NE10L
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STD5NE10L
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Partno	Mfg	Dc	Qty	Available	Descript
STD5NE10L	ST	N/a	2500	avai	N-CHANNEL 100V