STD50NH02L ,N-CHANNEL 24VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage Rating 30 Vspike(1)V Drai ..
STD50NH02L-1 ,N-CHANNEL 24VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STD50NH02L-1 ,N-CHANNEL 24VSTD50NH02LN-CHANNEL 24V - 0.0085 Ω - 50A DPAK/IPAKSTripFET™ III POWER MOSFETTYPE V R IDSS DS(on) DS ..
STD50NH02LT4 ,N-CHANNEL 24VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVDrain-source Voltage Rating 30 Vspike(1)V Drain ..
STD55NH2LL ,N-CHANNEL 24VSTD55NH2LLN-CHANNEL 24V - 0.010 Ω - 40A DPAK/IPAKULTRA LOW GATE CHARGE STripFET™ POWER MOSFETV R IT ..
STD55NH2LL-1 ,N-CHANNEL 24VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit(1)V Drain-source Voltage Rating 30 VspikeV Drai ..
SUB45N03-13L ,N-Channel 30-V (D-S), 175C MOSFETS-05010—Rev. G, 05-Nov-01 3C - Capacitance (pF) g - Transconductance (S)fs I - Drain Current (A ..
SUB45N05-20L ,N-ChanneL 50-V (D-S) 175C MOSFET, Logic LevelS-21855—Rev. B, 14-Oct-022-1SUP/SUB45N05-20LVishay SiliconixSPECIFICATIONS (T =25C UNLESS OTHERWIS ..
SUB60N06-18 ,N-Channel Enhancement-Mode Trans FaxBack 408-970-5600S–57253—Rev. D, 24-Feb-982-1SUP/SUB60N06-18Vishay Siliconix
STD50NH02L
N-CHANNEL 24V
1/10
PRELIMINARY DATAFebruary 2003
STD50NH02LN-CHANNEL 24V - 0.0085 Ω - 50A DPAK/IPAK
STripFET™ III POWER MOSFET TYPICAL RDS(on) = 0.0085 Ω @ 10 V TYPICAL RDS(on) = 0.012 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1") SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTIONThe STD50NH02L utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology. This is
suitable fot the most demanding DC-DC converter
application where high efficiency is to be achieved.
APPLICATIONS SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC CONVERTES
ABSOLUTE MAXIMUM RATINGS
INTERNAL SCHEMATIC DIAGRAM
STD50NH02L
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF
ON (4)
DYNAMIC
3/10
STD50NH02L
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE(1) Garanted when external Rg=4.7 Ω and tf < tfmax. (4) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area (5) Qoss = Coss*Δ Vin , Coss = Cgd + Cds . See Appendix A
(3) Starting Tj = 25 oC, ID = 25A, VDD = 15V
.
ELECTRICAL CHARACTERISTICS (continued)
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test CircuitAnd Diode Recovery Times
