STD50NH02L-1-STD50NH02LT4 Fast Delivery |IC PHOENIX CO.,LIMITED

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Partno	Mfg	Dc	Qty	Available	Descript
STD50NH02L-1 \|STD50NH02L1	ST	N/a	36600	avai	N-CHANNEL 24V
STD50NH02L-1 \|STD50NH02L1	ST进口	N/a	30120	avai	N-CHANNEL 24V
STD50NH02LT4	ST	N/a	80000	avai	N-CHANNEL 24V

STD50NH02LT4 ,N-CHANNEL 24VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVDrain-source Voltage Rating 30 Vspike(1)V Drain ..
STD55NH2LL ,N-CHANNEL 24VSTD55NH2LLN-CHANNEL 24V - 0.010 Ω - 40A DPAK/IPAKULTRA LOW GATE CHARGE STripFET™ POWER MOSFETV R IT ..
STD55NH2LL-1 ,N-CHANNEL 24VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit(1)V Drain-source Voltage Rating 30 VspikeV Drai ..
STD55NH2LLT4 ,N-CHANNEL 24VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STD5N20 ,N-CHANNEL 200VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 200 VDS GSV Drain ..
STD5N20L ,N-CHANNEL 200VFeatures Figure 1: PackageTYPE V R I PwDSS DS(on) DSTD5N20L 200 V < 0.7 Ω 5 A 33 W

STD50NH02L-1-STD50NH02LT4
N-CHANNEL 24V
1/12September 2003
STD50NH02L
N-CHANNEL 24V - 0.0085 Ω - 50A DPAK/IPAK
STripFET™ III POWER MOSFET TYPICAL RDS(on) = 0.0085 Ω @ 10 V TYPICAL RDS(on) = 0.012 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1") SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
The STD50NH02L utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology. This is
suitable fot the most demanding DC-DC converter
application where high efficiency is to be achieved.
APPLICATIONS SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC CONVERTES
Ordering Information
ABSOLUTE MAXIMUM RATINGS
INTERNAL SCHEMATIC DIAGRAM
STD50NH02L
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (4)
DYNAMIC
3/12
STD50NH02L
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(1) Garanted when external Rg=4.7 Ω and tf < tfmax. (4) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area (5) Qoss = Coss*Δ Vin , Coss = Cgd + Cds . See Appendix A
(3) Starting Tj = 25 oC, ID = 25A, VDD = 15V
.
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
STD50NH02L
Output Characteristics Transfer Characteristics
5/12
STD50NH02L
Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature .
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 4: Gate Charge test Circuit
And Diode Recovery Times

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