STD4NS25 ,N-CHANNEL 250V 0.9 OHM 4A DPAK/IPAK MESH OVERLAY MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 250 VDS GSV Drain ..
STD4NS25T4 ,N-CHANNEL 250V 0.9 OHM 4A DPAK/IPAK MESH OVERLAY MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 250 VDS GSV Drain ..
STD4NS25-T4 ,N-CHANNEL 250V 0.9 OHM 4A DPAK/IPAK MESH OVERLAY MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STD50N03L , N-CHANNEL 30V - 9.2mohm - 40A - DPAK/IPAK STripFET TM III Power MOSFET
STD50NH02L ,N-CHANNEL 24VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage Rating 30 Vspike(1)V Drai ..
STD50NH02L-1 ,N-CHANNEL 24VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
SUB15P01-52 ,P-Channel 8-V (D-S) 175C MOSFETABSOLUTE MAXIMUM RATINGS (T = 25C UNLESS OTHERWISE NOTED)AParameter Symbol Limit UnitDrain-Source ..
SUB15P01-52 ,P-Channel 8-V (D-S) 175C MOSFETS-20966—Rev. C, 01-Jul-02 1SUP/SUB15P01-52Vishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWIS ..
SUB40N06-25L ,N-Channel Enhancement-Mode MOSFETs, Logic LevelSUP/SUB40N06-25LVishay SiliconixN-Channel 60-V (D-S), 175C MOSFET, Logic Level
STD4NS25
N-CHANNEL 250V 0.9 OHM 4A DPAK/IPAK MESH OVERLAY MOSFET
1/9February 2001
STD4NS25N-CHANNEL 250V - 0.9Ω - 4A DPAK/IPAK
MESH OVERLAY™ MOSFET TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
DESCRIPTIONUsing the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
(1) ISD≤ 4A, di/dt≤300 A/μs, VDD≤ V(BR)DSS, Tj≤TjMAX
STD4NS25
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/9
STD4NS25
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Thermal ImpedanceSafe Operating Area
STD4NS25
Gate Charge vs Gate-source Voltage Capacitance Variations
Transconductance Static Drain-source On Resistance
Output Characteristics Transfer Characteristics
5/9
STD4NS25
Source-drain Diode Forward Characteristics
Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
