STP4NK80ZFP ,N-CHANNEL 800VSTP4NK80Z - STP4NK80ZFPSTD4NK80Z - STD4NK80Z-1N-CHANNEL 800V - 3Ω - 3A TO-220/TO-220FP/DPAK/IPAKZen ..
STP50NE10 ,N-CHANNEL 100VSTP50NE10® N - CHANNEL 100V - 0.021Ω - 50A TO-220STripFET™ POWER MOSFETTYPE V R IDSS DS(on) DS ..
STP50NF25 ,N-channel 250 V, 0.055 Ohm, 45 A, TO-220 low gate charge STripFET(TM) Power MOSFETElectrical characteristics(T =25°C unless otherwise specified)CASE Table 5. On/off statesSymbol Par ..
STP55NE06 ,N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFETSTP55NE06STP55NE06FPN - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE™ " POWER MOSFETTYPE V R IDSS ..
STP55NE06. ,N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFETSTP55NE06STP55NE06FPN - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE™ " POWER MOSFETTYPE V R IDSS ..
STP55NE06FP ,NABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP55NE06 STP55NE06FPV Drain-source Voltage (V = ..
T0-220 , Fit Rate / Equivalent Device Hours
T0-220 , Fit Rate / Equivalent Device Hours
T0790 ,700 MHz to 2700 MHz Direct Quadrature ModulatorBlock Diagram 16BBQ-1BBQ+4 13LO+ RF+0°12590°LO- RF-8BBI+9BBI-Rev. 4555C–SIGE–11/03Pin Configuration ..
T0800-PJQ ,5-CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures• Current-controlled Output Current Source with 5 Input Channels 2 Selectable Outputs for ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsApplications DVD-ROM with CD-RW Capability (Combo Drives)and 2 Outputs Combo Drives with CD and D ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..
STD4NK80Z-STP4NK80Z-STP4NK80ZFP
N-CHANNEL 800V
1/13February 2003
STP4NK80Z- STP4NK80ZFP
STD4NK80Z- STD4NK80Z-1N-CHANNEL 800V- 3Ω- 3A TO-220/TO-220FP/DPAK/IPAK
Zener-Protected SuperMESH™ Power MOSFET TYPICAL RDS(on)=3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTIONThe SuperMESH™ seriesis obtained through an
extreme optimizationof ST’s well established strip-
based PowerMESH™ layout.In additionto pushing
on-resistance significantly down, special careis tak-to ensurea very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full rangeof high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC LIGHTING
ORDERING INFORMATION
STP4NK80Z- STP4NK80ZFP- STD4NK80Z- STD4NK80Z-12/13
ABSOLUTE MAXIMUM RATINGS) Pulse width limitedby safe operating area
(1)ISD ≤4A, di/dt ≤200A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX.
(*) Limited onlyby maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionallybe
applied from gateto source.In this respect the Zener voltageis appropriateto achievean efficient and
cost-effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the
usageof external components.
3/13
STP4NK80Z- STP4NK80ZFP- STD4NK80Z- STD4NK80Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
STP4NK80Z- STP4NK80ZFP- STD4NK80Z- STD4NK80Z-14/13
Output Characteristics
Safe Operating Area For TO-220FP
Safe Operating Area For TO-220/DPAK/IPAK
Thermal Impedance For TO-220FP
Transfer Characteristics
5/13
STP4NK80Z- STP4NK80ZFP- STD4NK80Z- STD4NK80Z-1
Normalized Gate Threshold Voltagevs Temp.
Gate Chargevs Gate-source Voltage
Transconductance
Normalized On Resistancevs Temperature
STP4NK80Z- STP4NK80ZFP- STD4NK80Z- STD4NK80Z-16/13
Source-drain Diode Forward Characteristics Normalized BVDSSvs Temperature
Maximum Avalanche Energyvs Temperature
7/13
STP4NK80Z- STP4NK80ZFP- STD4NK80Z- STD4NK80Z-1
Fig.5: Test For Inductive
Fig.4: Gate Charge test Circuit
Fig.3: Switching
Resistive Load
