STD4NK50ZT4 ,N-CHANNEL 500VSTP4NK50Z - STP4NK50ZFPSTD4NK50Z - STD4NK50Z-1N-CHANNEL 500V - 2.4Ω - 3A TO-220/TO-220FP/DPAK/IPAKZ ..
STD4NK60Z ,N-CHANNEL 600VSTP4NK60Z-STP4NK60ZFP-STB4NK60Z-1STB4NK60Z-STD4NK60Z-STD4NK60Z-12 2N-CHANNEL600V-1.76Ω-4ATO-220/FP/ ..
STD4NK60Z-1 ,N-CHANNEL 600VSTP4NK60Z-STP4NK60ZFP-STB4NK60Z-1STB4NK60Z-STD4NK60Z-STD4NK60Z-12 2N-CHANNEL600V-1.76Ω-4ATO-220/FP/ ..
STD4NK60ZT4 ,N-CHANNEL 600VSTP4NK60Z-STP4NK60ZFP-STB4NK60Z-1STB4NK60Z-STD4NK60Z-STD4NK60Z-12 2N-CHANNEL600V-1.76Ω-4ATO-220/FP/ ..
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STD4NK80ZT4 ,N-CHANNEL 800VSTP4NK80Z - STP4NK80ZFPSTD4NK80Z - STD4NK80Z-1N-CHANNEL 800V - 3Ω - 3A TO-220/TO-220FP/DPAK/IPAKZen ..
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SUB40N06-25L ,N-Channel Enhancement-Mode MOSFETs, Logic LevelSUP/SUB40N06-25LVishay SiliconixN-Channel 60-V (D-S), 175C MOSFET, Logic Level
STD4NK50ZT4
N-CHANNEL 500V
1/13December 2002
STP4NK50Z- STP4NK50ZFP
STD4NK50Z- STD4NK50Z-1N-CHANNEL 500V- 2.4Ω - 3A TO-220/TO-220FP/DPAK/IPAK
Zener-Protected SuperMESH™Power MOSFET TYPICAL RDS(on)= 2.3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTIONThe SuperMESH™ seriesis obtained through an
extreme optimizationof ST’s well established strip-
based PowerMESH™ layout.In additionto pushing
on-resistance significantly down, special careis tak-to ensurea very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full rangeof high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC LIGHTING
ORDERING INFORMATION
STP4NK50Z- STP4NK50ZFP- STD4NK50Z- STD4NK50Z-12/13
ABSOLUTE MAXIMUM RATINGS) Pulse width limitedby safe operating area
(1)ISD ≤3A, di/dt ≤200A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX.
(*) Limited onlyby maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionallybe
applied from gateto source.In this respect the Zener voltageis appropriateto achievean efficient and
cost-effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the
usageof external components.
3/13
STP4NK50Z- STP4NK50ZFP- STD4NK50Z- STD4NK50Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
STP4NK50Z- STP4NK50ZFP- STD4NK50Z- STD4NK50Z-14/13
Safe Operating For TO-220
Safe Operating Area For DPAK/IPAK
Safe Operating Area For TO-220FP Thermal Impedance For TO-220FP
Thermal Impedance For DPAK/IPAK
5/13
STP4NK50Z- STP4NK50ZFP- STD4NK50Z- STD4NK50Z-1
Capacitance Variations
Static Drain-source On Resistance
Transfer Characteristics
Transconductance
Output Characteristics
Gate Chargevs Gate-source Voltage
STP4NK50Z- STP4NK50ZFP- STD4NK50Z- STD4NK50Z-16/13
Normalized
Maximum Avalanche Energyvs Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistancevs TemperatureNormalized Gate Threshold Voltagevs Temp.
7/13
STP4NK50Z- STP4NK50ZFP- STD4NK50Z- STD4NK50Z-1
Fig.5: Test Inductive
Fig.4: Gate Charge test Circuit
Fig.
Fig.3: Switching
Resistive Load
